Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy (2000)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
MARTINI, S. et al. Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. 2000, Anais.. São Paulo: SBF, 2000. . Acesso em: 15 fev. 2026. -
APA
Martini, S., Quivy, A. A., Leite, J. R., Lange, C., Richter, W., & Tokranov, V. E. (2000). Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. In Resumos. São Paulo: SBF. -
NLM
Martini S, Quivy AA, Leite JR, Lange C, Richter W, Tokranov VE. Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. Resumos. 2000 ;[citado 2026 fev. 15 ] -
Vancouver
Martini S, Quivy AA, Leite JR, Lange C, Richter W, Tokranov VE. Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. Resumos. 2000 ;[citado 2026 fev. 15 ] - Growth of 'SI' gama-doping superlattice in 'GA''AS'
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
- Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
- Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
- Alignment of self-organized MBE-grown quantum dots
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
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