Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy (2000)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
MARTINI, S. et al. Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. 2000, Anais.. São Paulo: SBF, 2000. . Acesso em: 18 abr. 2024. -
APA
Martini, S., Quivy, A. A., Leite, J. R., Lange, C., Richter, W., & Tokranov, V. E. (2000). Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. In Resumos. São Paulo: SBF. -
NLM
Martini S, Quivy AA, Leite JR, Lange C, Richter W, Tokranov VE. Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. Resumos. 2000 ;[citado 2024 abr. 18 ] -
Vancouver
Martini S, Quivy AA, Leite JR, Lange C, Richter W, Tokranov VE. Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy. Resumos. 2000 ;[citado 2024 abr. 18 ] - Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Coupled rate equation modeling of self-assembled quantum dot photoluminescence
- Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient
- Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
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