Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: FÍSICA; ESTRUTURA ELETRÔNICA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Book of Abstracts
- Conference titles: International Meeting on Applied Physics
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ABNT
SALES, F V de et al. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. 2003, Anais.. Badajoz: APHYS, 2003. . Acesso em: 17 mar. 2026. -
APA
Sales, F. V. de, Silva, S. W. da, Cruz, J. M. R., Monte, A. F. G., Soler, M. A. G., Morais, P. C., et al. (2003). Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. In Book of Abstracts. Badajoz: APHYS. -
NLM
Sales FV de, Silva SW da, Cruz JMR, Monte AFG, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. Book of Abstracts. 2003 ;[citado 2026 mar. 17 ] -
Vancouver
Sales FV de, Silva SW da, Cruz JMR, Monte AFG, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. Book of Abstracts. 2003 ;[citado 2026 mar. 17 ] - Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
- Growth of 'SI' gama-doping superlattice in 'GA''AS'
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
- Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
- Alignment of self-organized MBE-grown quantum dots
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
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