Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates (2000)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidades: IF; IF
- DOI: 10.1116/1.1303851
- Subjects: FÍSICA; INTERFACE
- Language: Inglês
- Imprenta:
- Publisher: American Vacuum Society
- Place of publication: New York
- Date published: 2000
- Source:
- Título do periódico: Journal of Vacuum Science & Technology B
- ISSN: 1071-1023
- Volume/Número/Paginação/Ano: v. 18, n. 4, p. 1991-1996, 2000
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
MARTINI, S.; QUIVY, A. A.; TABATA, A; LEITE, J. R. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, New York, American Vacuum Society, v. 18, n. 4, p. 1991-1996, 2000. Disponível em: < http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips > DOI: 10.1116/1.1303851. -
APA
Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2000). Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, 18( 4), 1991-1996. doi:10.1116/1.1303851 -
NLM
Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips -
Vancouver
Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JVTBD9000018000004001991000001&idtype=cvips - Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
- Optimization of MBE-grown of distributed Bragg reflectors for the fabrication optical devices
- Fabrication of indenpendent contacts to two closely spaced delta-doped GaAs layers
- Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates
- CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots
Informações sobre o DOI: 10.1116/1.1303851 (Fonte: oaDOI API)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
