Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates (2000)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1116/1.1303851
- Subjects: FÍSICA; INTERFACE
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Vacuum Science & Technology B
- ISSN: 1071-1023
- Volume/Número/Paginação/Ano: v. 18, n. 4, p. 1991-1996, 2000
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
MARTINI, S. et al. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, v. 18, n. 4, p. 1991-1996, 2000Tradução . . Disponível em: https://doi.org/10.1116/1.1303851. Acesso em: 15 fev. 2026. -
APA
Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2000). Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, 18( 4), 1991-1996. doi:10.1116/1.1303851 -
NLM
Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.[citado 2026 fev. 15 ] Available from: https://doi.org/10.1116/1.1303851 -
Vancouver
Martini S, Quivy AA, Tabata A, Leite JR. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates [Internet]. Journal of Vacuum Science & Technology B. 2000 ; 18( 4): 1991-1996.[citado 2026 fev. 15 ] Available from: https://doi.org/10.1116/1.1303851 - Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
- Growth of 'SI' gama-doping superlattice in 'GA''AS'
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
- Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
- Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Alignment of self-organized MBE-grown quantum dots
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
Informações sobre o DOI: 10.1116/1.1303851 (Fonte: oaDOI API)
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