Optical characterization of GaAs/AlAs multiple quantum wells interfaces (1998)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: FÍSICA; FÍSICA NUCLEAR
- Language: Inglês
- Imprenta:
- Publisher: Gordon & Breach
- Publisher place: London
- Date published: 1998
- Source:
- Título: Radiation Effects & Defects in Solids
- Volume/Número/Paginação/Ano: v. 146, p. 187-197, 1998
- Conference titles: Symposium on Defect Dependent Processes in Insulators and Seminconductors
-
ABNT
LEMOS, V et al. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. London: Gordon & Breach. . Acesso em: 08 out. 2024. , 1998 -
APA
Lemos, V., Sérgio, C. S., Pimenta Lima, A., Quivy, A. A., Enderlein, R., Leite, J. R., & Carvalho Junior, W. (1998). Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. London: Gordon & Breach. -
NLM
Lemos V, Sérgio CS, Pimenta Lima A, Quivy AA, Enderlein R, Leite JR, Carvalho Junior W. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. 1998 ; 146 187-197.[citado 2024 out. 08 ] -
Vancouver
Lemos V, Sérgio CS, Pimenta Lima A, Quivy AA, Enderlein R, Leite JR, Carvalho Junior W. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. 1998 ; 146 187-197.[citado 2024 out. 08 ] - Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
- Alignment of self-organized MBE-grown quantum dots
- Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
- Smooth p-type GaAs(001) films grown by molecular-beam epitaxy using silicon as the dopant
- Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates
- Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density
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