Optical characterization of GaAs/AlAs multiple quantum wells interfaces (1998)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: FÍSICA; FÍSICA NUCLEAR
- Language: Inglês
- Imprenta:
- Publisher: Gordon & Breach
- Publisher place: London
- Date published: 1998
- Source:
- Título: Radiation Effects & Defects in Solids
- Volume/Número/Paginação/Ano: v. 146, p. 187-197, 1998
- Conference titles: Symposium on Defect Dependent Processes in Insulators and Seminconductors
-
ABNT
LEMOS, V et al. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. London: Gordon & Breach. . Acesso em: 17 mar. 2026. , 1998 -
APA
Lemos, V., Sérgio, C. S., Pimenta Lima, A., Quivy, A. A., Enderlein, R., Leite, J. R., & Carvalho Junior, W. (1998). Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. London: Gordon & Breach. -
NLM
Lemos V, Sérgio CS, Pimenta Lima A, Quivy AA, Enderlein R, Leite JR, Carvalho Junior W. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. 1998 ; 146 187-197.[citado 2026 mar. 17 ] -
Vancouver
Lemos V, Sérgio CS, Pimenta Lima A, Quivy AA, Enderlein R, Leite JR, Carvalho Junior W. Optical characterization of GaAs/AlAs multiple quantum wells interfaces. Radiation Effects & Defects in Solids. 1998 ; 146 187-197.[citado 2026 mar. 17 ] - Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
- Growth of 'SI' gama-doping superlattice in 'GA''AS'
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
- Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
- Alignment of self-organized MBE-grown quantum dots
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
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