Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; SUPERFÍCIE FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Book of Abstract
- Volume/Número/Paginação/Ano: Fortaleza : DF/UFC, 2003
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
QUIVY, Alain André et al. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 09 jan. 2026. -
APA
Quivy, A. A., Martini, S., Lamas, T. E., Silva, M. J. da, & Silva, E. C. F. da. (2003). Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. In Book of Abstract. Fortaleza: DF/UFC. -
NLM
Quivy AA, Martini S, Lamas TE, Silva MJ da, Silva ECF da. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. Book of Abstract. 2003 ;[citado 2026 jan. 09 ] -
Vancouver
Quivy AA, Martini S, Lamas TE, Silva MJ da, Silva ECF da. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. Book of Abstract. 2003 ;[citado 2026 jan. 09 ] - Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells
- Modeling noise in superlattice quantum-well infrared photodetectors
- High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
- Energy levels for lens-shaped self-assembled quantum dots heterostructures
- Estudo dos modelos de ajuste da variaão do "gap" com a temperatura em GaAs "bulk"
- The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots
- Estudos magnetico-oticos das transicoes excitonicas de pocos quanticos de 'GA''AS' / 'GAALAS' com modulacao de dopagem tipo n
- In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat
- Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors
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