Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; SUPERFÍCIE FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Book of Abstract
- Volume/Número/Paginação/Ano: Fortaleza : DF/UFC, 2003
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
QUIVY, A. A. et al. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 25 set. 2024. -
APA
Quivy, A. A., Martini, S., Lamas, T. E., Silva, M. J. da, & Silva, E. C. F. da. (2003). Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. In Book of Abstract. Fortaleza: DF/UFC. -
NLM
Quivy AA, Martini S, Lamas TE, Silva MJ da, Silva ECF da. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. Book of Abstract. 2003 ;[citado 2024 set. 25 ] -
Vancouver
Quivy AA, Martini S, Lamas TE, Silva MJ da, Silva ECF da. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. Book of Abstract. 2003 ;[citado 2024 set. 25 ] - Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells
- Computation of dark current in QWIPs using a modelling based on ehrenfest theorem
- The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells
- Growth, processing and testing of infrared photodetectors based on quantum dots
- The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots
- Mid-Infrared (3-5 µm) photodetection in AlGaAs/GaAs QWIPs using photo-induced noise
- Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots
- Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors
- Studies of the radiative recombination processes in 'BE' - 'GAMA' doped 'GA''AS' structures
- Scattering processes on a quasi-two-dimensional electron gas in GaAs/InGaAs selectively doped quantum wells with embedded quantum dots
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas