High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy (2011)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: FOTODETECTORES
- Language: Inglês
- Imprenta:
- Publisher: UFJF
- Publisher place: Juiz de Fora
- Date published: 2011
- Source:
- Título do periódico: Resumo
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
FERNANDES, F M et al. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf. Acesso em: 23 abr. 2024. -
APA
Fernandes, F. M., Maia, A. D. B., Ferreira, D. T., Silva, E. C. F. da, & Quivy, A. A. (2011). High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf -
NLM
Fernandes FM, Maia ADB, Ferreira DT, Silva ECF da, Quivy AA. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy [Internet]. Resumo. 2011 ;[citado 2024 abr. 23 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf -
Vancouver
Fernandes FM, Maia ADB, Ferreira DT, Silva ECF da, Quivy AA. High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy [Internet]. Resumo. 2011 ;[citado 2024 abr. 23 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0026-1.pdf - Estudo dos modelos de ajuste da variaão do "gap" com a temperatura em GaAs "bulk"
- Energy levels for lens-shaped self-assembled quantum dots heterostructures
- High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors
- Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
- Modeling noise in superlattice quantum-well infrared photodetectors
- Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells
- Computation of dark current in QWIPs using a modelling based on ehrenfest theorem
- The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells
- Growth, processing and testing of infrared photodetectors based on quantum dots
- The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots
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