The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots (2005)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1063/1.1925329
- Subjects: SUPERFÍCIE FÍSICA; ESPECTROSCOPIA POR ABSORÇÃO ELETRÔNICA; ESTRUTURA ELETRÔNICA; DISPOSITIVOS ELETRÔNICOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of applied physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 97, n. 11, p. 113709/1-113709/6, 2005
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SILVA, Euzi Conceição Fernandes da e QUIVY, Alain André. The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots. Journal of applied physics, v. 97, n. 11, p. 113709/1-113709/6, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1925329. Acesso em: 10 fev. 2026. -
APA
Silva, E. C. F. da, & Quivy, A. A. (2005). The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots. Journal of applied physics, 97( 11), 113709/1-113709/6. doi:10.1063/1.1925329 -
NLM
Silva ECF da, Quivy AA. The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots [Internet]. Journal of applied physics. 2005 ; 97( 11): 113709/1-113709/6.[citado 2026 fev. 10 ] Available from: https://doi.org/10.1063/1.1925329 -
Vancouver
Silva ECF da, Quivy AA. The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots [Internet]. Journal of applied physics. 2005 ; 97( 11): 113709/1-113709/6.[citado 2026 fev. 10 ] Available from: https://doi.org/10.1063/1.1925329 - Mid-Infrared (3-5 µm) photodetection in AlGaAs/GaAs QWIPs using photo-induced noise
- Growth, processing and testing of infrared photodetectors based on quantum dots
- High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors
- Estudos magnetico-oticos das transicoes excitonicas de pocos quanticos de 'GA''AS' / 'GAALAS' com modulacao de dopagem tipo n
- Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors
- Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
- In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
- Energy levels for lens-shaped self-assembled quantum dots heterostructures
- Estudo dos modelos de ajuste da variaão do "gap" com a temperatura em GaAs "bulk"
Informações sobre o DOI: 10.1063/1.1925329 (Fonte: oaDOI API)
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