Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors (2011)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: FOTODETECTORES
- Language: Inglês
- Imprenta:
- Publisher: UFJF
- Publisher place: Juiz de Fora
- Date published: 2011
- Source:
- Título: Resumo
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
MAIA, Alvaro Diego Bernardino et al. Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors. 2011, Anais.. Juiz de Fora: UFJF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-2.pdf. Acesso em: 01 mar. 2026. -
APA
Maia, A. D. B., Fernandes, F. M., Silva, E. C. F. da, & Quivy, A. A. (2011). Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors. In Resumo. Juiz de Fora: UFJF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-2.pdf -
NLM
Maia ADB, Fernandes FM, Silva ECF da, Quivy AA. Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors [Internet]. Resumo. 2011 ;[citado 2026 mar. 01 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-2.pdf -
Vancouver
Maia ADB, Fernandes FM, Silva ECF da, Quivy AA. Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors [Internet]. Resumo. 2011 ;[citado 2026 mar. 01 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/extras/bwsp15/sys/resumos/R0025-2.pdf - Mid-Infrared (3-5 µm) photodetection in AlGaAs/GaAs QWIPs using photo-induced noise
- Growth, processing and testing of infrared photodetectors based on quantum dots
- The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots
- High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors
- Estudos magnetico-oticos das transicoes excitonicas de pocos quanticos de 'GA''AS' / 'GAALAS' com modulacao de dopagem tipo n
- Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
- In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
- Energy levels for lens-shaped self-assembled quantum dots heterostructures
- Estudo dos modelos de ajuste da variaão do "gap" com a temperatura em GaAs "bulk"
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