High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors (2015)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; POÇOS QUÂNTICOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
CLARO, Marcel Santos et al. High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors. 2015, Anais.. São Paulo: SBF, 2015. Disponível em: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf. Acesso em: 01 mar. 2026. -
APA
Claro, M. S., Silva, E. C. F. da, Quivy, A. A., & Stroppa, D. G. (2015). High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors. In Resumos. São Paulo: SBF. Recuperado de http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf -
NLM
Claro MS, Silva ECF da, Quivy AA, Stroppa DG. High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors [Internet]. Resumos. 2015 ;[citado 2026 mar. 01 ] Available from: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf -
Vancouver
Claro MS, Silva ECF da, Quivy AA, Stroppa DG. High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors [Internet]. Resumos. 2015 ;[citado 2026 mar. 01 ] Available from: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf - Mid-Infrared (3-5 µm) photodetection in AlGaAs/GaAs QWIPs using photo-induced noise
- Growth, processing and testing of infrared photodetectors based on quantum dots
- The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots
- Estudos magnetico-oticos das transicoes excitonicas de pocos quanticos de 'GA''AS' / 'GAALAS' com modulacao de dopagem tipo n
- Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors
- Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
- In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
- Energy levels for lens-shaped self-assembled quantum dots heterostructures
- Estudo dos modelos de ajuste da variaão do "gap" com a temperatura em GaAs "bulk"
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