High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors (2015)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Subjects: FÍSICA DA MATÉRIA CONDENSADA; POÇOS QUÂNTICOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
CLARO, Marcel Santos et al. High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors. 2015, Anais.. São Paulo: SBF, 2015. Disponível em: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf. Acesso em: 28 mar. 2024. -
APA
Claro, M. S., Silva, E. C. F. da, Quivy, A. A., & Stroppa, D. G. (2015). High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors. In Resumos. São Paulo: SBF. Recuperado de http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf -
NLM
Claro MS, Silva ECF da, Quivy AA, Stroppa DG. High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors [Internet]. Resumos. 2015 ;[citado 2024 mar. 28 ] Available from: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf -
Vancouver
Claro MS, Silva ECF da, Quivy AA, Stroppa DG. High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors [Internet]. Resumos. 2015 ;[citado 2024 mar. 28 ] Available from: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf - Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells
- The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells
- Computation of dark current in QWIPs using a modelling based on ehrenfest theorem
- Growth, processing and testing of infrared photodetectors based on quantum dots
- The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots
- Mid-Infrared (3-5 µm) photodetection in AlGaAs/GaAs QWIPs using photo-induced noise
- Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots
- Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors
- Estudo dos modelos de ajuste da variaão do "gap" com a temperatura em GaAs "bulk"
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
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