High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors (2015)
- Autores:
- Autores USP: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assuntos: FÍSICA DA MATÉRIA CONDENSADA; POÇOS QUÂNTICOS
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Resumos
- Nome do evento: Encontro Nacional de Física da Matéria Condensada
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ABNT
CLARO, Marcel Santos et al. High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors. 2015, Anais.. São Paulo: SBF, 2015. Disponível em: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf. Acesso em: 24 abr. 2024. -
APA
Claro, M. S., Silva, E. C. F. da, Quivy, A. A., & Stroppa, D. G. (2015). High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors. In Resumos. São Paulo: SBF. Recuperado de http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf -
NLM
Claro MS, Silva ECF da, Quivy AA, Stroppa DG. High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors [Internet]. Resumos. 2015 ;[citado 2024 abr. 24 ] Available from: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf -
Vancouver
Claro MS, Silva ECF da, Quivy AA, Stroppa DG. High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors [Internet]. Resumos. 2015 ;[citado 2024 abr. 24 ] Available from: http://www1.sbfisica.org.br/eventos/enfmc/xxxviii/sys/resumos/R0389-1.pdf - Estudo dos modelos de ajuste da variaão do "gap" com a temperatura em GaAs "bulk"
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
- Energy levels for lens-shaped self-assembled quantum dots heterostructures
- Modeling noise in superlattice quantum-well infrared photodetectors
- Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
- Studies of the radiative recombination processes in 'BE' - 'GAMA' doped 'GA''AS' structures
- Scattering processes on a quasi-two-dimensional electron gas in GaAs/InGaAs selectively doped quantum wells with embedded quantum dots
- Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells
- Simulation of the dark current of quantum-well infrared photodetectors
- Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells
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