Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots (2003)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1063/1.1568538
- Subjects: ESTRUTURA ELETRÔNICA; DIFRAÇÃO POR RAIOS X; ÓPTICA; FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 93, n. 10, p. 6279-6283, 2003
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: bronze
-
ABNT
DUARTE, C A et al. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, v. 93, n. 10, p. 6279-6283, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1568538. Acesso em: 15 nov. 2024. -
APA
Duarte, C. A., Silva, E. C. F. da, Quivy, A. A., Silva, M. J. da, Martini, S., Leite, J. R., et al. (2003). Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, 93( 10), 6279-6283. doi:10.1063/1.1568538 -
NLM
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 nov. 15 ] Available from: https://doi.org/10.1063/1.1568538 -
Vancouver
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 nov. 15 ] Available from: https://doi.org/10.1063/1.1568538 - Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- H-band emission in single heterojunctions
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si 'sigma'-doped 'GaAs/In IND.0.15' 'Ga IND.0.85'As quantum wells
- Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
Informações sobre o DOI: 10.1063/1.1568538 (Fonte: oaDOI API)
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