H-band emission in single heterojunctions (2003)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1016/s0026-2692(03)00119-8
- Subjects: SEMICONDUTORES; FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Microelectronics Journal
- ISSN: 0026-2692
- Volume/Número/Paginação/Ano: v. 34, n. 5-8, p. 755-757, 2003
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
QU, Fanyao et al. H-band emission in single heterojunctions. Microelectronics Journal, v. 34, n. 5-8, p. 755-757, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00119-8. Acesso em: 19 abr. 2024. -
APA
Qu, F., Lino, A. T., Dantas, N. O., Morais, P. C., Silva, E. C. F. da, Quivy, A. A., & Leite, J. R. (2003). H-band emission in single heterojunctions. Microelectronics Journal, 34( 5-8), 755-757. doi:10.1016/s0026-2692(03)00119-8 -
NLM
Qu F, Lino AT, Dantas NO, Morais PC, Silva ECF da, Quivy AA, Leite JR. H-band emission in single heterojunctions [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 755-757.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/s0026-2692(03)00119-8 -
Vancouver
Qu F, Lino AT, Dantas NO, Morais PC, Silva ECF da, Quivy AA, Leite JR. H-band emission in single heterojunctions [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 755-757.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/s0026-2692(03)00119-8 - Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
- Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
- Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
Informações sobre o DOI: 10.1016/s0026-2692(03)00119-8 (Fonte: oaDOI API)
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