Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1016/s0026-2692(03)00066-1
- Assunto: ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Advanced Technology
- Publisher place: Oxford
- Date published: 2003
- Source:
- Título do periódico: Microelectronics Journal
- ISSN: 0026-2692
- Volume/Número/Paginação/Ano: v. 34, n. 5-8, p. 631-633, 2003
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SILVA, M J da; MARTINI, S; LAMAS, T. E.; et al. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, Oxford, Elsevier Advanced Technology, v. 34, n. 5-8, p. 631-633, 2003. Disponível em: < http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1 > DOI: 10.1016/s0026-2692(03)00066-1. -
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, 34( 5-8), 631-633. doi:10.1016/s0026-2692(03)00066-1 -
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1 -
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1 - Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- H-band emission in single heterojunctions
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
Informações sobre o DOI: 10.1016/s0026-2692(03)00066-1 (Fonte: oaDOI API)
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