Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1016/s0026-2692(03)00066-1
- Assunto: ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Microelectronics Journal
- ISSN: 0026-2692
- Volume/Número/Paginação/Ano: v. 34, n. 5-8, p. 631-633, 2003
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SILVA, M J da et al. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, v. 34, n. 5-8, p. 631-633, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00066-1. Acesso em: 19 fev. 2026. -
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, 34( 5-8), 631-633. doi:10.1016/s0026-2692(03)00066-1 -
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2026 fev. 19 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1 -
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2026 fev. 19 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1 - The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant
Informações sobre o DOI: 10.1016/s0026-2692(03)00066-1 (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 |
1-s2.0-S0026269203000661-... |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
