Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy

Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy (2003)

Authors:
USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA; FOTOLUMINESCÊNCIA
Language: Inglês
Imprenta:
- Publisher: DF/UFC
- Publisher place: Fortaleza
- Date published: 2003
Source:
- Título: Book of Abstract
- Volume/Número/Paginação/Ano: Fortaleza : DF/UFC, 2003
Conference titles: Brazilian Workshop on Semiconductor Physics

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ABNT

LAMAS, T. E. et al. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 17 mar. 2026.
APA

Lamas, T. E., Quivy, A. A., Martini, S., Silva, M. J. da, & Leite, J. R. (2003). Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. In Book of Abstract. Fortaleza: DF/UFC.
NLM

Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. Book of Abstract. 2003 ;[citado 2026 mar. 17 ]
Vancouver

Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. Book of Abstract. 2003 ;[citado 2026 mar. 17 ]