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Artigo de periodico
Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots (2016)
Tanaka, R. Y.; Abe, N. M.; Passaro, A.; Silva, Euzi Conceicao Fernandes da; Quivy, Alain Andre
Source: Journal of Physics D: Applied Physics. Unidade: IF
Subjects: MICROSCOPIA, ESTRUTURA ELETRÔNICA
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ABNT
TANAKA, R. Y. et al. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots. Journal of Physics D: Applied Physics, v. 49, n. ju 2016, p. 215101, 2016Tradução . . Disponível em: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101. Acesso em: 04 nov. 2025.
APA
Tanaka, R. Y., Abe, N. M., Passaro, A., Silva, E. C. F. da, & Quivy, A. A. (2016). Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots. Journal of Physics D: Applied Physics, 49( ju 2016), 215101. doi:10.1088/0022-3727/49/21/215101
NLM
Tanaka RY, Abe NM, Passaro A, Silva ECF da, Quivy AA. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots [Internet]. Journal of Physics D: Applied Physics. 2016 ; 49( ju 2016): 215101.[citado 2025 nov. 04 ] Available from: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101
Vancouver
Tanaka RY, Abe NM, Passaro A, Silva ECF da, Quivy AA. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots [Internet]. Journal of Physics D: Applied Physics. 2016 ; 49( ju 2016): 215101.[citado 2025 nov. 04 ] Available from: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101
Artigo de periodico
Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 (2005)
Monte, A F G; Cunha, J F R; Soler, M A P; Silva, S W; Quivy, A. A.; Morais, P C
Source: Microelectronics Journal. Unidade: IF
Subjects: MICROELETRÔNICA, DISPOSITIVOS ELETRÔNICOS, NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, ESTRUTURA ELETRÔNICA
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ABNT
MONTE, A F G et al. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3. Microelectronics Journal, v. 36, n. 3-6, p. 194-196, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2005.02.003. Acesso em: 04 nov. 2025.
APA
Monte, A. F. G., Cunha, J. F. R., Soler, M. A. P., Silva, S. W., Quivy, A. A., & Morais, P. C. (2005). Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3. Microelectronics Journal, 36( 3-6), 194-196. doi:10.1016/j.mejo.2005.02.003
NLM
Monte AFG, Cunha JFR, Soler MAP, Silva SW, Quivy AA, Morais PC. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 194-196.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.003
Vancouver
Monte AFG, Cunha JFR, Soler MAP, Silva SW, Quivy AA, Morais PC. Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 [Internet]. Microelectronics Journal. 2005 ; 36( 3-6): 194-196.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.003
Artigo de periodico
The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots (2005)
Silva, E C F; Quivy, A. A.
Source: Journal of applied physics. Unidade: IF
Subjects: SUPERFÍCIE FÍSICA, ESPECTROSCOPIA POR ABSORÇÃO ELETRÔNICA, ESTRUTURA ELETRÔNICA, DISPOSITIVOS ELETRÔNICOS
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SILVA, E C F e QUIVY, A. A. The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots. Journal of applied physics, v. 97, n. 11, p. 113709/1-113709/6, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1925329. Acesso em: 04 nov. 2025.
APA
Silva, E. C. F., & Quivy, A. A. (2005). The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots. Journal of applied physics, 97( 11), 113709/1-113709/6. doi:10.1063/1.1925329
NLM
Silva ECF, Quivy AA. The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots [Internet]. Journal of applied physics. 2005 ; 97( 11): 113709/1-113709/6.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1925329
Vancouver
Silva ECF, Quivy AA. The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots [Internet]. Journal of applied physics. 2005 ; 97( 11): 113709/1-113709/6.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1925329
Artigo de periodico
Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates (2005)
Martini, S; Quivy, A. A.; Lamas, T E; Silva, E C F da
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS, ESTRUTURA ELETRÔNICA
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ABNT
MARTINI, S et al. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates. Physical Review B, v. 72, n. 15, p. 153304/01-153304/04, 2005Tradução . . Disponível em: https://doi.org/10.1103/physrevb.72.153304. Acesso em: 04 nov. 2025.
APA
Martini, S., Quivy, A. A., Lamas, T. E., & Silva, E. C. F. da. (2005). Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates. Physical Review B, 72( 15), 153304/01-153304/04. doi:10.1103/physrevb.72.153304
NLM
Martini S, Quivy AA, Lamas TE, Silva ECF da. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates [Internet]. Physical Review B. 2005 ; 72( 15): 153304/01-153304/04.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/physrevb.72.153304
Vancouver
Martini S, Quivy AA, Lamas TE, Silva ECF da. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates [Internet]. Physical Review B. 2005 ; 72( 15): 153304/01-153304/04.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/physrevb.72.153304
Artigo de periodico
Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m (2005)
Rudno-Rudzinski; Ryczko, K; Sek, G; Misiewicz, J; Silva, M J da; Quivy, A. A.
Source: Solid State Communications. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, LASER, FOTOLUMINESCÊNCIA
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ABNT
RUDNO-RUDZINSKI, et al. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, v. 135, n. 4, p. 232-236, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2005.04.030. Acesso em: 04 nov. 2025.
APA
Rudno-Rudzinski,, Ryczko, K., Sek, G., Misiewicz, J., Silva, M. J. da, & Quivy, A. A. (2005). Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, 135( 4), 232-236. doi:10.1016/j.ssc.2005.04.030
NLM
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030
Vancouver
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030
Artigo de periodico
Charge density wave instability in a parabolic well in perpendicular magnetic field (2004)
Gousev, Guennadii Michailovich; Sergio, C. S.; Quivy, A. A.; Lamas, T. E.; Leite, J. R.; Estibals, O.; Portal, J. C.
Source: Physica E - Low Dimensional Systems & Nanostructures. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA
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ABNT
GOUSEV, Guennadii Michailovich et al. Charge density wave instability in a parabolic well in perpendicular magnetic field. Physica E - Low Dimensional Systems & Nanostructures, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf. Acesso em: 04 nov. 2025.
APA
Gousev, G. M., Sergio, C. S., Quivy, A. A., Lamas, T. E., Leite, J. R., Estibals, O., & Portal, J. C. (2004). Charge density wave instability in a parabolic well in perpendicular magnetic field. Physica E - Low Dimensional Systems & Nanostructures. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf
NLM
Gousev GM, Sergio CS, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Charge density wave instability in a parabolic well in perpendicular magnetic field [Internet]. Physica E - Low Dimensional Systems & Nanostructures. 2004 ;[citado 2025 nov. 04 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf
Vancouver
Gousev GM, Sergio CS, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Charge density wave instability in a parabolic well in perpendicular magnetic field [Internet]. Physica E - Low Dimensional Systems & Nanostructures. 2004 ;[citado 2025 nov. 04 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6VMT-4BT1FH9-2-2M&_cdi=6159&_orig=browse&_coverDate=04%2F30%2F2004&_sk=999779998&view=c&wchp=dGLbVlz-zSkWz&_acct=C000049650&_version=1&_userid=972067&md5=214ee51686c9a56ea86537ccc9a9fd57&ie=f.pdf
Artigo de periodico
Transport of the quasi-three-dimensional hole gas in a magnetic field in the ultra-quantum limit (2004)
Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T E; Leite, J. R.
Source: Physica E. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, NANOTECNOLOGIA
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ABNT
GUSEV, Guennadii Michailovich et al. Transport of the quasi-three-dimensional hole gas in a magnetic field in the ultra-quantum limit. Physica E, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2003.12.015. Acesso em: 04 nov. 2025.
APA
Gusev, G. M., Quivy, A. A., Lamas, T. E., & Leite, J. R. (2004). Transport of the quasi-three-dimensional hole gas in a magnetic field in the ultra-quantum limit. Physica E. doi:10.1016/j.physe.2003.12.015
NLM
Gusev GM, Quivy AA, Lamas TE, Leite JR. Transport of the quasi-three-dimensional hole gas in a magnetic field in the ultra-quantum limit [Internet]. Physica E. 2004 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/j.physe.2003.12.015
Vancouver
Gusev GM, Quivy AA, Lamas TE, Leite JR. Transport of the quasi-three-dimensional hole gas in a magnetic field in the ultra-quantum limit [Internet]. Physica E. 2004 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/j.physe.2003.12.015
Artigo de periodico
Transport properties of a quantum Hall ferromagnet in parabolic wells (2004)
Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T E; Leite, J. R.
Source: Physica E. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, NANOTECNOLOGIA
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ABNT
GUSEV, Guennadii Michailovich et al. Transport properties of a quantum Hall ferromagnet in parabolic wells. Physica E, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.physe.2003.11.223. Acesso em: 04 nov. 2025.
APA
Gusev, G. M., Quivy, A. A., Lamas, T. E., & Leite, J. R. (2004). Transport properties of a quantum Hall ferromagnet in parabolic wells. Physica E. doi:10.1016/j.physe.2003.11.223
NLM
Gusev GM, Quivy AA, Lamas TE, Leite JR. Transport properties of a quantum Hall ferromagnet in parabolic wells [Internet]. Physica E. 2004 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/j.physe.2003.11.223
Vancouver
Gusev GM, Quivy AA, Lamas TE, Leite JR. Transport properties of a quantum Hall ferromagnet in parabolic wells [Internet]. Physica E. 2004 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/j.physe.2003.11.223
Artigo de periodico
Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates (2004)
Monte, A F G; Soler, M A G; Silva, S W da; Rodrigues, B B D; Morais, P C; Quivy, A. A.; Leite, J. R.
Source: Physica E. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
MONTE, A F G et al. Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates. Physica E, v. 23, n. 3-4, p. 466-470, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c. Acesso em: 04 nov. 2025.
APA
Monte, A. F. G., Soler, M. A. G., Silva, S. W. da, Rodrigues, B. B. D., Morais, P. C., Quivy, A. A., & Leite, J. R. (2004). Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates. Physica E, 23( 3-4), 466-470. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c
NLM
Monte AFG, Soler MAG, Silva SW da, Rodrigues BBD, Morais PC, Quivy AA, Leite JR. Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates [Internet]. Physica E. 2004 ; 23( 3-4): 466-470.[citado 2025 nov. 04 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c
Vancouver
Monte AFG, Soler MAG, Silva SW da, Rodrigues BBD, Morais PC, Quivy AA, Leite JR. Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substrates [Internet]. Physica E. 2004 ; 23( 3-4): 466-470.[citado 2025 nov. 04 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6159&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=17f1fea449f699588a0075ae9a65600c
Artigo de periodico
CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots (2003)
Cruz, J M R; Sales, F V de; Silva, S W da; Soler, M A G; Morais, P C; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Physica E. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
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ABNT
CRUZ, J M R et al. CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots. Physica E, v. 17, n. 1-4, p. 107-108, 2003Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(02)00721-x. Acesso em: 04 nov. 2025.
APA
Cruz, J. M. R., Sales, F. V. de, Silva, S. W. da, Soler, M. A. G., Morais, P. C., Silva, M. J. da, et al. (2003). CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots. Physica E, 17( 1-4), 107-108. doi:10.1016/s1386-9477(02)00721-x
NLM
Cruz JMR, Sales FV de, Silva SW da, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots [Internet]. Physica E. 2003 ; 17( 1-4): 107-108.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s1386-9477(02)00721-x
Vancouver
Cruz JMR, Sales FV de, Silva SW da, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots [Internet]. Physica E. 2003 ; 17( 1-4): 107-108.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s1386-9477(02)00721-x
Artigo de periodico
Morphological and optical properties of p-type GaAs(001) layers doped with silicon (2003)
Lamas, T. E.; Martini, S; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
LAMAS, T. E. et al. Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, v. 34, n. 5-8, p. 701-703, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00106-x. Acesso em: 04 nov. 2025.
APA
Lamas, T. E., Martini, S., Silva, M. J. da, Quivy, A. A., & Leite, J. R. (2003). Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, 34( 5-8), 701-703. doi:10.1016/s0026-2692(03)00106-x
NLM
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Vancouver
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Artigo de periodico
Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots (2003)
Sales, F V de; Silva, S W da; Cruz, J M R; Soler, M A G; Morais, P C; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Physica E. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
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ABNT
SALES, F V de et al. Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots. Physica E, v. 17, n. 1-4, p. 120-121, 2003Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(02)00739-7. Acesso em: 04 nov. 2025.
APA
Sales, F. V. de, Silva, S. W. da, Cruz, J. M. R., Soler, M. A. G., Morais, P. C., Silva, M. J. da, et al. (2003). Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots. Physica E, 17( 1-4), 120-121. doi:10.1016/s1386-9477(02)00739-7
NLM
Sales FV de, Silva SW da, Cruz JMR, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots [Internet]. Physica E. 2003 ; 17( 1-4): 120-121.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s1386-9477(02)00739-7
Vancouver
Sales FV de, Silva SW da, Cruz JMR, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots [Internet]. Physica E. 2003 ; 17( 1-4): 120-121.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s1386-9477(02)00739-7
Trabalho de evento-resumo
Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain (2003)
Gomes, Paulo F; Godoy, M P F; Nakaema, M K K; Iikawa, F; Lamas, T. E.; Quivy, A. A.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
GOMES, Paulo F et al. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2025.
APA
Gomes, P. F., Godoy, M. P. F., Nakaema, M. K. K., Iikawa, F., Lamas, T. E., & Quivy, A. A. (2003). Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Gomes PF, Godoy MPF, Nakaema MKK, Iikawa F, Lamas TE, Quivy AA. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. Book of Abstracts. 2003 ;[citado 2025 nov. 04 ]
Vancouver
Gomes PF, Godoy MPF, Nakaema MKK, Iikawa F, Lamas TE, Quivy AA. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. Book of Abstracts. 2003 ;[citado 2025 nov. 04 ]
Artigo de periodico
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
SILVA, M J da et al. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, v. 34, n. 5-8, p. 631-633, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00066-1. Acesso em: 04 nov. 2025.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, 34( 5-8), 631-633. doi:10.1016/s0026-2692(03)00066-1
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Artigo de periodico
Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well (2003)
Sergio, C S; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T E; Leite, J. R.; Estibals, O; Portal, J C
Source: Microeletronics Journal. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, EFEITO HALL, MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SERGIO, C S et al. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. Microeletronics Journal, 2003Tradução . . Disponível em: https://doi.org/10.1016/S0026-2692(03)00121-6. Acesso em: 04 nov. 2025.
APA
Sergio, C. S., Gusev, G. M., Quivy, A. A., Lamas, T. E., Leite, J. R., Estibals, O., & Portal, J. C. (2003). Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. Microeletronics Journal. doi:10.1016/S0026-2692(03)00121-6
NLM
Sergio CS, Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well [Internet]. Microeletronics Journal. 2003 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/S0026-2692(03)00121-6
Vancouver
Sergio CS, Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well [Internet]. Microeletronics Journal. 2003 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/S0026-2692(03)00121-6
Trabalho de evento-resumo
Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces (2003)
Quivy, A. A.; Martini, S; Lamas, T. E.; Silva, M. J. da; Silva, Euzi Conceicao Fernandes da
Source: Book of Abstract. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
QUIVY, A. A. et al. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 04 nov. 2025.
APA
Quivy, A. A., Martini, S., Lamas, T. E., Silva, M. J. da, & Silva, E. C. F. da. (2003). Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. In Book of Abstract. Fortaleza: DF/UFC.
NLM
Quivy AA, Martini S, Lamas TE, Silva MJ da, Silva ECF da. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. Book of Abstract. 2003 ;[citado 2025 nov. 04 ]
Vancouver
Quivy AA, Martini S, Lamas TE, Silva MJ da, Silva ECF da. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. Book of Abstract. 2003 ;[citado 2025 nov. 04 ]
Trabalho de evento-resumo
Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image (2003)
Sales, F V de; Silva, S W da; Cruz, J M R; Monte, A F G; Soler, M A G; Morais, P C; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Meeting on Applied Physics. Unidade: IF
Subjects: FÍSICA, ESTRUTURA ELETRÔNICA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALES, F V de et al. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. 2003, Anais.. Badajoz: APHYS, 2003. . Acesso em: 04 nov. 2025.
APA
Sales, F. V. de, Silva, S. W. da, Cruz, J. M. R., Monte, A. F. G., Soler, M. A. G., Morais, P. C., et al. (2003). Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. In Book of Abstracts. Badajoz: APHYS.
NLM
Sales FV de, Silva SW da, Cruz JMR, Monte AFG, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. Book of Abstracts. 2003 ;[citado 2025 nov. 04 ]
Vancouver
Sales FV de, Silva SW da, Cruz JMR, Monte AFG, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image. Book of Abstracts. 2003 ;[citado 2025 nov. 04 ]
Artigo de periodico
Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well (2003)
Sérgio, C. S.; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T. E.; Leite, J. R.; Estibals, O; Portal, J C
Source: Microelectronics Journal. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTIVIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SÉRGIO, C. S. et al. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. Microelectronics Journal, v. 34, n. 5-8, p. 763-766, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1. Acesso em: 04 nov. 2025.
APA
Sérgio, C. S., Gusev, G. M., Quivy, A. A., Lamas, T. E., Leite, J. R., Estibals, O., & Portal, J. C. (2003). Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. Microelectronics Journal, 34( 5-8), 763-766. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
NLM
Sérgio CS, Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 763-766.[citado 2025 nov. 04 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
Vancouver
Sérgio CS, Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 763-766.[citado 2025 nov. 04 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5748&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=76443bb13e16222257c8c9659dea3cf1
Trabalho de evento-resumo
Large InAs/GaAs quantum dots optically active in the long-wavelength region (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots optically active in the long-wavelength region. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2025.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Large InAs/GaAs quantum dots optically active in the long-wavelength region. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2025 nov. 04 ]
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2025 nov. 04 ]
Trabalho de evento-resumo
Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy (2003)
Lamas, T. E.; Quivy, A. A.; Martini, S; Silva, M J da; Leite, J. R.
Source: Book of Abstract. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LAMAS, T. E. et al. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 04 nov. 2025.
APA
Lamas, T. E., Quivy, A. A., Martini, S., Silva, M. J. da, & Leite, J. R. (2003). Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. In Book of Abstract. Fortaleza: DF/UFC.
NLM
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. Book of Abstract. 2003 ;[citado 2025 nov. 04 ]
Vancouver
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. Book of Abstract. 2003 ;[citado 2025 nov. 04 ]

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