Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain (2003)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Publisher place: Amsterdam
- Date published: 2003
- Source:
- Título: Book of Abstracts
- Conference titles: International Conference on Defects in Semiconductors
-
ABNT
GOMES, Paulo F et al. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 14 fev. 2026. -
APA
Gomes, P. F., Godoy, M. P. F., Nakaema, M. K. K., Iikawa, F., Lamas, T. E., & Quivy, A. A. (2003). Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. In Book of Abstracts. Amsterdam: Elsevier Science. -
NLM
Gomes PF, Godoy MPF, Nakaema MKK, Iikawa F, Lamas TE, Quivy AA. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. Book of Abstracts. 2003 ;[citado 2026 fev. 14 ] -
Vancouver
Gomes PF, Godoy MPF, Nakaema MKK, Iikawa F, Lamas TE, Quivy AA. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. Book of Abstracts. 2003 ;[citado 2026 fev. 14 ] - Calculation of two-dimensional scattering patterns for oriented systems
- Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3
- Investigation of the electron-phonon interaction in GaAs/`Al IND.x´`Ga IND.1-x´As coupled double quantum wells
- Photoluminescence in self assembled quantum dos of InAs grown with different deposition rates
- Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells
- Growth and characterization of 'IN' 'GA''AS' quantum dots by molecular beam epitaxy
- Effect of barrier composition fluctuation on luminescence properties of AlGaAs/GaAs single quantum wells
- Influência da composição da barreira sobre a fotoluminescência dependente da temperatura em poços quânticos de $Al_xGa_{1-x}As/GaAs$
- Interdot carrier transfer in self-assembled 'IN''AS'/'GA''AS' double-quantum-dots structures
- Preparation of atomically flat GaAs surfaces for molecular beam epitaxy
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