CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1016/s1386-9477(02)00721-x
- Subjects: ESTRUTURA ELETRÔNICA; FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
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ABNT
CRUZ, J M R et al. CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots. Physica E, v. 17, n. 1-4, p. 107-108, 2003Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(02)00721-x. Acesso em: 12 jan. 2026. -
APA
Cruz, J. M. R., Sales, F. V. de, Silva, S. W. da, Soler, M. A. G., Morais, P. C., Silva, M. J. da, et al. (2003). CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots. Physica E, 17( 1-4), 107-108. doi:10.1016/s1386-9477(02)00721-x -
NLM
Cruz JMR, Sales FV de, Silva SW da, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots [Internet]. Physica E. 2003 ; 17( 1-4): 107-108.[citado 2026 jan. 12 ] Available from: https://doi.org/10.1016/s1386-9477(02)00721-x -
Vancouver
Cruz JMR, Sales FV de, Silva SW da, Soler MAG, Morais PC, Silva MJ da, Quivy AA, Leite JR. CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots [Internet]. Physica E. 2003 ; 17( 1-4): 107-108.[citado 2026 jan. 12 ] Available from: https://doi.org/10.1016/s1386-9477(02)00721-x - Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells
- Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates
- Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density
- Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
- Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates
- Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots
Informações sobre o DOI: 10.1016/s1386-9477(02)00721-x (Fonte: oaDOI API)
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