Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots (1998)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: ENGENHARIA AUTOMOBILÍSTICA
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Publisher place: Amsterdam
- Date published: 1998
- Source:
- Título: Microelectronic Engineering
- Volume/Número/Paginação/Ano: v. 43-44, p. 19-23, 1998
- Conference titles: International Conference on Low Dimensional Structures and Devices
-
ABNT
QUIVY, Alain André e LEITE, J. R. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. Amsterdam: Elsevier Science. . Acesso em: 02 jan. 2026. , 1998 -
APA
Quivy, A. A., & Leite, J. R. (1998). Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. Amsterdam: Elsevier Science. -
NLM
Quivy AA, Leite JR. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. 1998 ; 43-44 19-23.[citado 2026 jan. 02 ] -
Vancouver
Quivy AA, Leite JR. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. 1998 ; 43-44 19-23.[citado 2026 jan. 02 ] - Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
- Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Coupled rate equation modeling of self-assembled quantum dot photoluminescence
- Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient
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