Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots (1998)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: ENGENHARIA AUTOMOBILÍSTICA
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Publisher place: Amsterdam
- Date published: 1998
- Source:
- Título: Microelectronic Engineering
- Volume/Número/Paginação/Ano: v. 43-44, p. 19-23, 1998
- Conference titles: International Conference on Low Dimensional Structures and Devices
-
ABNT
QUIVY, Alain André e LEITE, J. R. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. Amsterdam: Elsevier Science. . Acesso em: 17 fev. 2026. , 1998 -
APA
Quivy, A. A., & Leite, J. R. (1998). Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. Amsterdam: Elsevier Science. -
NLM
Quivy AA, Leite JR. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. 1998 ; 43-44 19-23.[citado 2026 fev. 17 ] -
Vancouver
Quivy AA, Leite JR. Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots. Microelectronic Engineering. 1998 ; 43-44 19-23.[citado 2026 fev. 17 ] - Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
- Growth of 'SI' gama-doping superlattice in 'GA''AS'
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
- Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
- Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
- Alignment of self-organized MBE-grown quantum dots
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