Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density (2002)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physica Status Solidi A-Applied Research
- ISSN: 0031-8965
- Volume/Número/Paginação/Ano: v. 187, n. 7, p. 45-48, 2002
-
ABNT
SALES, F V de et al. Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density. Physica Status Solidi A-Applied Research, v. 187, n. 7, p. 45-48, 2002Tradução . . Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512477&PLACEBO=IE.pdf. Acesso em: 17 mar. 2026. -
APA
Sales, F. V. de, Silva, S. W. da, Monte, F. G., Soler, M. A. G., Cruz, J. M. R., Silva, M. J. da, et al. (2002). Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density. Physica Status Solidi A-Applied Research, 187( 7), 45-48. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512477&PLACEBO=IE.pdf -
NLM
Sales FV de, Silva SW da, Monte FG, Soler MAG, Cruz JMR, Silva MJ da, Quivy AA, Leite JR, Morais PC. Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density [Internet]. Physica Status Solidi A-Applied Research. 2002 ; 187( 7): 45-48.[citado 2026 mar. 17 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512477&PLACEBO=IE.pdf -
Vancouver
Sales FV de, Silva SW da, Monte FG, Soler MAG, Cruz JMR, Silva MJ da, Quivy AA, Leite JR, Morais PC. Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density [Internet]. Physica Status Solidi A-Applied Research. 2002 ; 187( 7): 45-48.[citado 2026 mar. 17 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512477&PLACEBO=IE.pdf - Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
- Growth of 'SI' gama-doping superlattice in 'GA''AS'
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
- Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
- Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
- Alignment of self-organized MBE-grown quantum dots
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