Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density (2002)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physica Status Solidi A-Applied Research
- ISSN: 0031-8965
- Volume/Número/Paginação/Ano: v. 187, n. 7, p. 45-48, 2002
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ABNT
SALES, F V de et al. Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density. Physica Status Solidi A-Applied Research, v. 187, n. 7, p. 45-48, 2002Tradução . . Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512477&PLACEBO=IE.pdf. Acesso em: 12 jan. 2026. -
APA
Sales, F. V. de, Silva, S. W. da, Monte, F. G., Soler, M. A. G., Cruz, J. M. R., Silva, M. J. da, et al. (2002). Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density. Physica Status Solidi A-Applied Research, 187( 7), 45-48. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512477&PLACEBO=IE.pdf -
NLM
Sales FV de, Silva SW da, Monte FG, Soler MAG, Cruz JMR, Silva MJ da, Quivy AA, Leite JR, Morais PC. Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density [Internet]. Physica Status Solidi A-Applied Research. 2002 ; 187( 7): 45-48.[citado 2026 jan. 12 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512477&PLACEBO=IE.pdf -
Vancouver
Sales FV de, Silva SW da, Monte FG, Soler MAG, Cruz JMR, Silva MJ da, Quivy AA, Leite JR, Morais PC. Excitation transfer through quantum dots measured by microluminescence: dependence on the quantum dot density [Internet]. Physica Status Solidi A-Applied Research. 2002 ; 187( 7): 45-48.[citado 2026 jan. 12 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=85512477&PLACEBO=IE.pdf - Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells
- Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates
- Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
- Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates
- CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots
- Observation of the spectral dependence of the spatial photocarrier redistribution in InAs/GaAs quantum dots
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