Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells (1995)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Materials Science & Engineering B
- Volume/Número/Paginação/Ano: v.35, p.401-5, 1995
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ABNT
TABATA, A et al. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells. Materials Science & Engineering B, v. 35, p. 401-5, 1995Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf. Acesso em: 17 mar. 2026. -
APA
Tabata, A., Ceschin, A. M., Quivy, A. A., Levine, A., Leite, J. R., Enderlein, R., et al. (1995). Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells. Materials Science & Engineering B, 35, 401-5. Recuperado de https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf -
NLM
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells [Internet]. Materials Science & Engineering B. 1995 ;35 401-5.[citado 2026 mar. 17 ] Available from: https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf -
Vancouver
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells [Internet]. Materials Science & Engineering B. 1995 ;35 401-5.[citado 2026 mar. 17 ] Available from: https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf - Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
- Growth of 'SI' gama-doping superlattice in 'GA''AS'
- Characterization of distributed Bragg reflectors and vertical-cavity semiconductor structures by modulation spectroscopy
- Energy transfer in small lens-shaped in as quantum dots observed by microluminescence image
- Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
- Alignment of self-organized MBE-grown quantum dots
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