Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells (1995)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Materials Science & Engineering B
- Volume/Número/Paginação/Ano: v.35, p.401-5, 1995
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ABNT
TABATA, A et al. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells. Materials Science & Engineering B, v. 35, p. 401-5, 1995Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf. Acesso em: 18 nov. 2024. -
APA
Tabata, A., Ceschin, A. M., Quivy, A. A., Levine, A., Leite, J. R., Enderlein, R., et al. (1995). Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells. Materials Science & Engineering B, 35, 401-5. Recuperado de https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf -
NLM
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells [Internet]. Materials Science & Engineering B. 1995 ;35 401-5.[citado 2024 nov. 18 ] Available from: https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf -
Vancouver
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'DELTA'- doped quantum wells [Internet]. Materials Science & Engineering B. 1995 ;35 401-5.[citado 2024 nov. 18 ] Available from: https://repositorio.usp.br/directbitstream/0b6feb87-87b0-4377-a5f5-f1c3d5458807/1-s2.0-0921510795013296-main.pdf - Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
- Crescimento e caracterizacao optica de heteroestrutura de 'AL IND.X'ga ind.1-x''as' / 'ga''as' E 'in ind.Y''ga ind.1-y''as' / 'ga''as'
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
- Optimization of MBE-grown of distributed Bragg reflectors for the fabrication optical devices
- Fabrication of indenpendent contacts to two closely spaced delta-doped GaAs layers
- Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
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