Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m (2005)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1016/j.ssc.2005.04.030
- Subjects: ESTRUTURA ELETRÔNICA; LASER; FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título: Solid State Communications
- ISSN: 0038-1098
- Volume/Número/Paginação/Ano: v. 135, n. 4, p. 232-236, 2005
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
RUDNO-RUDZINSKI, et al. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, v. 135, n. 4, p. 232-236, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2005.04.030. Acesso em: 22 jan. 2026. -
APA
Rudno-Rudzinski,, Ryczko, K., Sek, G., Misiewicz, J., Silva, M. J. da, & Quivy, A. A. (2005). Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, 135( 4), 232-236. doi:10.1016/j.ssc.2005.04.030 -
NLM
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030 -
Vancouver
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030 - Theoretical and experimental study of the excitonic binding energy in 'GA''AS'/'AL''GA''AS' single and coupled double quantum wells
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Informações sobre o DOI: 10.1016/j.ssc.2005.04.030 (Fonte: oaDOI API)
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