New method for studying semiconducting surfaces in air by scanning tunneling microscopy (1997)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Source:
- Título do periódico: Modern Physics Letters B
- Volume/Número/Paginação/Ano: v. 10, n. 24, p. 1189-1195, 1997
-
ABNT
FERLAUTO, A S; QUIVY, A. A. New method for studying semiconducting surfaces in air by scanning tunneling microscopy. Modern Physics Letters B[S.l.], v. 10, n. 24, p. 1189-1195, 1997. -
APA
Ferlauto, A. S., & Quivy, A. A. (1997). New method for studying semiconducting surfaces in air by scanning tunneling microscopy. Modern Physics Letters B, 10( 24), 1189-1195. -
NLM
Ferlauto AS, Quivy AA. New method for studying semiconducting surfaces in air by scanning tunneling microscopy. Modern Physics Letters B. 1997 ; 10( 24): 1189-1195. -
Vancouver
Ferlauto AS, Quivy AA. New method for studying semiconducting surfaces in air by scanning tunneling microscopy. Modern Physics Letters B. 1997 ; 10( 24): 1189-1195. - p-type doping of GaAs(001) layers grown by droplet-assisted MBE using silicon as a dopant
- Microscopio de tonelamento operando no ar
- Programa de controle e tratamento de dados para um microscopio de tunelamento
- Influência das flutuações da composição química das barreiras sobre as recombinações excitônicas em poços quânticos de 'Al IND.X' Ga IND.1-X' As/GaAs
- Calculation of two-dimensional scattering patterns for oriented systems
- High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates
- Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m
- Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers
- Influence of barrier height and thickness on temperature dependence of excitonic transitions in coupled double quantum wells of 'Al IND.x' 'Ga IND.1-x' As/GaAs
- Behavior of excitonic transitions in AlGaAs/GaAs coupled double quantum wells as a function of temperature and excitation power
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