Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer (2020)
- Authors:
- Autor USP: QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1016/j.sna.2019.111725
- Subjects: EPITAXIA POR FEIXE MOLECULAR; SEMICONDUTIVIDADE; FÍSICA MODERNA; FOTODETECTORES; RADIAÇÃO INFRAVERMELHA; POÇOS QUÂNTICOS
- Keywords: Superlattices; MQW; Electric field non-uniformity; Low temperature I-V; QWIP; C-V
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Sensors and Actuators A: Physical
- ISSN: 0924-4247
- Volume/Número/Paginação/Ano: v. 301, janeiro, 2020, número do artigo: 111725
- Status:
- Nenhuma versão em acesso aberto identificada
-
ABNT
SANTOS, Tiago G. et al. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer. Sensors and Actuators A: Physical, v. 301, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2019.111725. Acesso em: 15 abr. 2026. -
APA
Santos, T. G., Vieira, G. S., Delfino, C. A., Tanaka, R. Y., Abe, N. M., Passaro, A., et al. (2020). Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer. Sensors and Actuators A: Physical, 301. doi:10.1016/j.sna.2019.111725 -
NLM
Santos TG, Vieira GS, Delfino CA, Tanaka RY, Abe NM, Passaro A, Fernandes FM, Quivy AA. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer [Internet]. Sensors and Actuators A: Physical. 2020 ; 301[citado 2026 abr. 15 ] Available from: https://doi.org/10.1016/j.sna.2019.111725 -
Vancouver
Santos TG, Vieira GS, Delfino CA, Tanaka RY, Abe NM, Passaro A, Fernandes FM, Quivy AA. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer [Internet]. Sensors and Actuators A: Physical. 2020 ; 301[citado 2026 abr. 15 ] Available from: https://doi.org/10.1016/j.sna.2019.111725 - Calculation of two-dimensional scattering patterns for oriented systems
- Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3
- Investigation of the electron-phonon interaction in GaAs/`Al IND.x´`Ga IND.1-x´As coupled double quantum wells
- Photoluminescence in self assembled quantum dos of InAs grown with different deposition rates
- Behavior of excitonic binding energy in single and double 'GA''AS'/'AL''GA''AS' quantum wells
- Growth and characterization of 'IN' 'GA''AS' quantum dots by molecular beam epitaxy
- Effect of barrier composition fluctuation on luminescence properties of AlGaAs/GaAs single quantum wells
- Influência da composição da barreira sobre a fotoluminescência dependente da temperatura em poços quânticos de $Al_xGa_{1-x}As/GaAs$
- Interdot carrier transfer in self-assembled 'IN''AS'/'GA''AS' double-quantum-dots structures
- Preparation of atomically flat GaAs surfaces for molecular beam epitaxy
Informações sobre a disponibilidade de versões do artigo em acesso aberto coletadas automaticamente via oaDOI API (Unpaywall).
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 |
1-s2.0-S0924424719308507-... |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
