Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors (2023)
Fonte: SBMicro. Nome do evento: Symposium on Microelectronics Technology and Devices. Unidade: EP
Assuntos: TRANSISTORES, MICROELETRÔNICA, MATERIAIS NANOESTRUTURADOS
ABNT
SOUTO, Rayana Carvalho de Barros e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors. 2023, Anais.. [Piscataway]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302596. Acesso em: 20 set. 2024.APA
Souto, R. C. de B., Martino, J. A., & Agopian, P. G. D. (2023). Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors. In SBMicro. [Piscataway]: IEEE. doi:10.1109/SBMicro60499.2023.10302596NLM
Souto RC de B, Martino JA, Agopian PGD. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors [Internet]. SBMicro. 2023 ;[citado 2024 set. 20 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302596Vancouver
Souto RC de B, Martino JA, Agopian PGD. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors [Internet]. SBMicro. 2023 ;[citado 2024 set. 20 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302596