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Artigo de periodico
Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: CIRCUITOS ANALÓGICOS, TRANSISTORES
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ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, v. 38, n. 9, p. 1-12, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aceb84. Acesso em: 05 dez. 2025.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, 38( 9), 1-12. doi:10.1088/1361-6641/aceb84
NLM
Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/1361-6641/aceb84
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/1361-6641/aceb84
Artigo de periodico
Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation (2014)
Bordallo, Caio Cesar Mendes ; Martino, João Antonio ; Teixeira, Fernando Ferrari; Silveira, Marcilei Aparecida Guazzelli da; Agopian, Paula Ghedini Der ; Simoen, Eddy ; Claeys, Cor
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: RAIOS X, MICROELETRÔNICA
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ABNT
BORDALLO, Caio Cesar Mendes et al. Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation. Semiconductor Science and Technology, v. 29, n. 12, p. 125015, 2014Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/29/12/125015. Acesso em: 05 dez. 2025.
APA
Bordallo, C. C. M., Martino, J. A., Teixeira, F. F., Silveira, M. A. G. da, Agopian, P. G. D., Simoen, E., & Claeys, C. (2014). Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation. Semiconductor Science and Technology, 29( 12), 125015. doi:10.1088/0268-1242/29/12/125015
NLM
Bordallo CCM, Martino JA, Teixeira FF, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation [Internet]. Semiconductor Science and Technology. 2014 ; 29( 12): 125015.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/29/12/125015
Vancouver
Bordallo CCM, Martino JA, Teixeira FF, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation [Internet]. Semiconductor Science and Technology. 2014 ; 29( 12): 125015.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/29/12/125015
Artigo de periodico
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape (2009)
Bühler, Rudolf Theoderich; Giacomini, R; Pavanello, Marcelo Antonio ; Martino, João Antonio
Source: Semiconductor Science and Technology. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
BÜHLER, Rudolf Theoderich et al. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape. Semiconductor Science and Technology, v. 24, n. 11, 2009Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/24/11/115017. Acesso em: 05 dez. 2025.
APA
Bühler, R. T., Giacomini, R., Pavanello, M. A., & Martino, J. A. (2009). Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape. Semiconductor Science and Technology, 24( 11). doi:10.1088/0268-1242/24/11/115017
NLM
Bühler RT, Giacomini R, Pavanello MA, Martino JA. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape [Internet]. Semiconductor Science and Technology. 2009 ; 24( 11):[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/24/11/115017
Vancouver
Bühler RT, Giacomini R, Pavanello MA, Martino JA. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape [Internet]. Semiconductor Science and Technology. 2009 ; 24( 11):[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/24/11/115017
Artigo de periodico
Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate (2006)
Pacheco-Salazar, D G; Leite, J. R.; Cerdeira, F; Meneses, E A; Li, S F; As, D J; Lischka, K
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESPALHAMENTO
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ABNT
PACHECO-SALAZAR, D G et al. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, v. 21, n. 7, p. 846-851, 2006Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/21/7/003. Acesso em: 05 dez. 2025.
APA
Pacheco-Salazar, D. G., Leite, J. R., Cerdeira, F., Meneses, E. A., Li, S. F., As, D. J., & Lischka, K. (2006). Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, 21( 7), 846-851. doi:10.1088/0268-1242/21/7/003
NLM
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Vancouver
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Artigo de periodico
Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate (1999)
Tabata, A.; Lima, A. P.; Leite, J. R.; Lemos, V.; Schikora, D.; Schottker, B.; Kohler, U.; As, D. J.; Lischka, K.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: ENGENHARIA MECÂNICA
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ABNT
TABATA, A. et al. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. Semiconductor Science and Technology, v. 14, n. 4, p. 318-322, 1999Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/14/4/005. Acesso em: 05 dez. 2025.
APA
Tabata, A., Lima, A. P., Leite, J. R., Lemos, V., Schikora, D., Schottker, B., et al. (1999). Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate. Semiconductor Science and Technology, 14( 4), 318-322. doi:10.1088/0268-1242/14/4/005
NLM
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. Semiconductor Science and Technology. 1999 ; 14( 4): 318-322.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/14/4/005
Vancouver
Tabata A, Lima AP, Leite JR, Lemos V, Schikora D, Schottker B, Kohler U, As DJ, Lischka K. Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate [Internet]. Semiconductor Science and Technology. 1999 ; 14( 4): 318-322.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/14/4/005
Artigo de periodico
Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN' (1998)
Rodrigues, S C P; Rosa, A L; Scolfaro, Luísa Maria Ribeiro; Beliaev, Dmitri; Leite, J. R.; Enderlein, R; Alves, J L A
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: ENGENHARIA MECÂNICA
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ABNT
RODRIGUES, S C P et al. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, v. 13, p. 981-988, 1998Tradução . . Acesso em: 05 dez. 2025.
APA
Rodrigues, S. C. P., Rosa, A. L., Scolfaro, L. M. R., Beliaev, D., Leite, J. R., Enderlein, R., & Alves, J. L. A. (1998). Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, 13, 981-988.
NLM
Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2025 dez. 05 ]
Vancouver
Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2025 dez. 05 ]
Artigo de periodico
Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy (1998)
Soares, J A N T; Enderlein, R; Beliaev, D; Leite, J. R.; Saito, M
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: ENGENHARIA MECÂNICA, MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
SOARES, J A N T et al. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, v. 13, n. 12, p. 1418-1425, 1998Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/13/12/015. Acesso em: 05 dez. 2025.
APA
Soares, J. A. N. T., Enderlein, R., Beliaev, D., Leite, J. R., & Saito, M. (1998). Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, 13( 12), 1418-1425. doi:10.1088/0268-1242/13/12/015
NLM
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015
Vancouver
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015
Artigo de periodico
Single and periodically Si Delta-doped Inp grown by Lp-movpe (1997)
Yavich, B; Souza, P. L.; Pamplona-Pires, M; Henriques, André Bohomoletz ; Gonçalves, L. C. D.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: FÍSICA
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ABNT
YAVICH, B et al. Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology, v. 12, p. 481-484, 1997Tradução . . Acesso em: 05 dez. 2025.
APA
Yavich, B., Souza, P. L., Pamplona-Pires, M., Henriques, A. B., & Gonçalves, L. C. D. (1997). Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology, 12, 481-484.
NLM
Yavich B, Souza PL, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology. 1997 ; 12 481-484.[citado 2025 dez. 05 ]
Vancouver
Yavich B, Souza PL, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Single and periodically Si Delta-doped Inp grown by Lp-movpe. Semiconductor Science and Technology. 1997 ; 12 481-484.[citado 2025 dez. 05 ]
Artigo de periodico
Electronic properties of gated 'DELTA'-doped semiconductors (1997)
Gonçalves, L. C. D.; Henriques, André Bohomoletz
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
GONÇALVES, L. C. D. e HENRIQUES, André Bohomoletz. Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology, v. 12, p. 203-9, 1997Tradução . . Acesso em: 05 dez. 2025.
APA
Gonçalves, L. C. D., & Henriques, A. B. (1997). Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology, 12, 203-9.
NLM
Gonçalves LCD, Henriques AB. Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology. 1997 ;12 203-9.[citado 2025 dez. 05 ]
Vancouver
Gonçalves LCD, Henriques AB. Electronic properties of gated 'DELTA'-doped semiconductors. Semiconductor Science and Technology. 1997 ;12 203-9.[citado 2025 dez. 05 ]
Artigo de periodico
Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling (1997)
Gonçalves, L. C. D.; Henriques, André Bohomoletz ; Souza, P. L.; Yavich, B
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
GONÇALVES, L. C. D. et al. Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling. Semiconductor Science and Technology, v. 12, p. 1455-1458, 1997Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/12/11/022. Acesso em: 05 dez. 2025.
APA
Gonçalves, L. C. D., Henriques, A. B., Souza, P. L., & Yavich, B. (1997). Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling. Semiconductor Science and Technology, 12, 1455-1458. doi:10.1088/0268-1242/12/11/022
NLM
Gonçalves LCD, Henriques AB, Souza PL, Yavich B. Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling [Internet]. Semiconductor Science and Technology. 1997 ; 12 1455-1458.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/12/11/022
Vancouver
Gonçalves LCD, Henriques AB, Souza PL, Yavich B. Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling [Internet]. Semiconductor Science and Technology. 1997 ; 12 1455-1458.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/12/11/022
Artigo de periodico
Characterization of delta-doped superlattices by shubnikov-de haas measurements (1996)
Henriques, André Bohomoletz ; Gonçalves, L. C. D.; Souza, P. L.; Yavich, B
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
HENRIQUES, André Bohomoletz et al. Characterization of delta-doped superlattices by shubnikov-de haas measurements. Semiconductor Science and Technology, v. 11, p. 190-5, 1996Tradução . . Acesso em: 05 dez. 2025.
APA
Henriques, A. B., Gonçalves, L. C. D., Souza, P. L., & Yavich, B. (1996). Characterization of delta-doped superlattices by shubnikov-de haas measurements. Semiconductor Science and Technology, 11, 190-5.
NLM
Henriques AB, Gonçalves LCD, Souza PL, Yavich B. Characterization of delta-doped superlattices by shubnikov-de haas measurements. Semiconductor Science and Technology. 1996 ;11 190-5.[citado 2025 dez. 05 ]
Vancouver
Henriques AB, Gonçalves LCD, Souza PL, Yavich B. Characterization of delta-doped superlattices by shubnikov-de haas measurements. Semiconductor Science and Technology. 1996 ;11 190-5.[citado 2025 dez. 05 ]
Artigo de periodico
Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics (1995)
Santos Filho, Sebastião Gomes dos ; Hasenack, Claus Martin; Lopes, M C V; Baranauskas, V
Source: Semiconductor Science and Technology. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
SANTOS FILHO, Sebastião Gomes dos et al. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics. Semiconductor Science and Technology, v. 10, n. 7 , p. 990-6, 1995Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/10/7/015. Acesso em: 05 dez. 2025.
APA
Santos Filho, S. G. dos, Hasenack, C. M., Lopes, M. C. V., & Baranauskas, V. (1995). Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics. Semiconductor Science and Technology, 10( 7 ), 990-6. doi:10.1088/0268-1242/10/7/015
NLM
Santos Filho SG dos, Hasenack CM, Lopes MCV, Baranauskas V. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics [Internet]. Semiconductor Science and Technology. 1995 ;10( 7 ): 990-6.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/10/7/015
Vancouver
Santos Filho SG dos, Hasenack CM, Lopes MCV, Baranauskas V. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics [Internet]. Semiconductor Science and Technology. 1995 ;10( 7 ): 990-6.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/10/7/015
Artigo de periodico
Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS' (1993)
Henriques, André Bohomoletz ; Gonçalves, L. C. D.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: FÍSICA DE PARTÍCULAS
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ABNT
HENRIQUES, André Bohomoletz e GONÇALVES, L. C. D. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology, v. 8 , n. 4 , p. 585-9, 1993Tradução . . Acesso em: 05 dez. 2025.
APA
Henriques, A. B., & Gonçalves, L. C. D. (1993). Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology, 8 ( 4 ), 585-9.
NLM
Henriques AB, Gonçalves LCD. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology. 1993 ;8 ( 4 ): 585-9.[citado 2025 dez. 05 ]
Vancouver
Henriques AB, Gonçalves LCD. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology. 1993 ;8 ( 4 ): 585-9.[citado 2025 dez. 05 ]
Artigo de periodico
New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures (1993)
Beliaev, D; Scolfaro, L M R; Leite, J. R.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
BELIAEV, D e SCOLFARO, L M R e LEITE, J. R. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology, v. 8 , p. 1479, 1993Tradução . . Acesso em: 05 dez. 2025.
APA
Beliaev, D., Scolfaro, L. M. R., & Leite, J. R. (1993). New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology, 8 , 1479.
NLM
Beliaev D, Scolfaro LMR, Leite JR. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology. 1993 ;8 1479.[citado 2025 dez. 05 ]
Vancouver
Beliaev D, Scolfaro LMR, Leite JR. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology. 1993 ;8 1479.[citado 2025 dez. 05 ]
Artigo de periodico
Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices (1993)
Ferraz, A. C.; Srivastava, G. P.
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
FERRAZ, A. C. e SRIVASTAVA, G. P. Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology, v. 8 , n. ja 1993, p. 67-72, 1993Tradução . . Acesso em: 05 dez. 2025.
APA
Ferraz, A. C., & Srivastava, G. P. (1993). Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology, 8 ( ja 1993), 67-72.
NLM
Ferraz AC, Srivastava GP. Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology. 1993 ;8 ( ja 1993): 67-72.[citado 2025 dez. 05 ]
Vancouver
Ferraz AC, Srivastava GP. Atomic relaxation and electronic states in ultrathin 'GE' / 'ZN''SE' superlattices. Semiconductor Science and Technology. 1993 ;8 ( ja 1993): 67-72.[citado 2025 dez. 05 ]
Artigo de periodico
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy (1991)
Henriques, André Bohomoletz ; Chidley, E T R; Haywood, S K; Nicholas, R J; Mason, N J; Walker, P J
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz et al. Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy. Semiconductor Science and Technology, v. 6 , p. 45, 1991Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/6/1/009. Acesso em: 05 dez. 2025.
APA
Henriques, A. B., Chidley, E. T. R., Haywood, S. K., Nicholas, R. J., Mason, N. J., & Walker, P. J. (1991). Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy. Semiconductor Science and Technology, 6 , 45. doi:10.1088/0268-1242/6/1/009
NLM
Henriques AB, Chidley ETR, Haywood SK, Nicholas RJ, Mason NJ, Walker PJ. Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy [Internet]. Semiconductor Science and Technology. 1991 ;6 45.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/6/1/009
Vancouver
Henriques AB, Chidley ETR, Haywood SK, Nicholas RJ, Mason NJ, Walker PJ. Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy [Internet]. Semiconductor Science and Technology. 1991 ;6 45.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/6/1/009
Artigo de periodico
Many-electron treatment for chalcogen complexes in silicon (1990)
Fazzio, Adalberto ; Antonelli, A; Ferreira de Paula Junior, H; Canuto, Sylvio Roberto Accioly
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
FAZZIO, Adalberto et al. Many-electron treatment for chalcogen complexes in silicon. Semiconductor Science and Technology, v. 5 , n. 3 , p. 196-9, 1990Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/5/3/002. Acesso em: 05 dez. 2025.
APA
Fazzio, A., Antonelli, A., Ferreira de Paula Junior, H., & Canuto, S. R. A. (1990). Many-electron treatment for chalcogen complexes in silicon. Semiconductor Science and Technology, 5 ( 3 ), 196-9. doi:10.1088/0268-1242/5/3/002
NLM
Fazzio A, Antonelli A, Ferreira de Paula Junior H, Canuto SRA. Many-electron treatment for chalcogen complexes in silicon [Internet]. Semiconductor Science and Technology. 1990 ;5 ( 3 ): 196-9.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/5/3/002
Vancouver
Fazzio A, Antonelli A, Ferreira de Paula Junior H, Canuto SRA. Many-electron treatment for chalcogen complexes in silicon [Internet]. Semiconductor Science and Technology. 1990 ;5 ( 3 ): 196-9.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/5/3/002
Artigo de periodico
Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells (1987)
Degani, Marcos Henrique; Hipólito, Oscar
Source: Semiconductor Science and Technology. Unidade: IFSC
Subjects: FÍSICA TEÓRICA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DEGANI, Marcos Henrique e HIPÓLITO, Oscar. Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells. Semiconductor Science and Technology, v. 2 , p. 578-581, 1987Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/2/9/003. Acesso em: 05 dez. 2025.
APA
Degani, M. H., & Hipólito, O. (1987). Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells. Semiconductor Science and Technology, 2 , 578-581. doi:10.1088/0268-1242/2/9/003
NLM
Degani MH, Hipólito O. Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells [Internet]. Semiconductor Science and Technology. 1987 ;2 578-581.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/2/9/003
Vancouver
Degani MH, Hipólito O. Exciton-phonon systems in 'GA''AS'-'GA IND. 1-X''AL IND.X''AS' quantum wells [Internet]. Semiconductor Science and Technology. 1987 ;2 578-581.[citado 2025 dez. 05 ] Available from: https://doi.org/10.1088/0268-1242/2/9/003

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