Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy (1998)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1088/0268-1242/13/12/015
- Subjects: ENGENHARIA MECÂNICA; MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v. 13, n. 12, p. 1418-1425, 1998
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SOARES, J A N T et al. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, v. 13, n. 12, p. 1418-1425, 1998Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/13/12/015. Acesso em: 23 jan. 2026. -
APA
Soares, J. A. N. T., Enderlein, R., Beliaev, D., Leite, J. R., & Saito, M. (1998). Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy. Semiconductor Science and Technology, 13( 12), 1418-1425. doi:10.1088/0268-1242/13/12/015 -
NLM
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015 -
Vancouver
Soares JANT, Enderlein R, Beliaev D, Leite JR, Saito M. Photoreflectance spectra from GaAs HEMT structures reinvestigated: solution of an old controversy [Internet]. Semiconductor Science and Technology. 1998 ; 13( 12): 1418-1425.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1088/0268-1242/13/12/015 - Optical properties of cubic InGaN epilayers grown by MBE
- Elementary excitations of modulation-doped quantum-wells
- Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures
- Theoretical LEED parameters for the zinc-blende GaN (110) surface
- Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy
- Self-consistent band structure calculations by the variational cellular method
- Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
- Deep-levels associated to chalcogen impurities in silicon
- Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures
Informações sobre o DOI: 10.1088/0268-1242/13/12/015 (Fonte: oaDOI API)
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