Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics (1987)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1987
- Descrição física: 313p
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ABNT
Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics. . Singapore: World Scientific. . Acesso em: 23 jan. 2026. , 1987 -
APA
Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics. (1987). Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics. Singapore: World Scientific. -
NLM
Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics. 1987 ;[citado 2026 jan. 23 ] -
Vancouver
Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics. 1987 ;[citado 2026 jan. 23 ] - Optical properties of cubic InGaN epilayers grown by MBE
- Elementary excitations of modulation-doped quantum-wells
- Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures
- Theoretical LEED parameters for the zinc-blende GaN (110) surface
- Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy
- Self-consistent band structure calculations by the variational cellular method
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
- Deep-levels associated to chalcogen impurities in silicon
- Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures
- Ferromagnetic order in the cubic metalic phase of a (Ga, Mn)N: Monte Carlo simulation
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