Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'

Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN' (1998)

Authors:
USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
Unidade: IF
Assunto: ENGENHARIA MECÂNICA
Language: Inglês
Source:
- Título: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v. 13, p. 981-988, 1998

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ABNT

RODRIGUES, S C P et al. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, v. 13, p. 981-988, 1998Tradução . . Acesso em: 23 jan. 2026.
APA

Rodrigues, S. C. P., Rosa, A. L., Scolfaro, L. M. R., Beliaev, D., Leite, J. R., Enderlein, R., & Alves, J. L. A. (1998). Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology, 13, 981-988.
NLM

Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2026 jan. 23 ]
Vancouver

Rodrigues SCP, Rosa AL, Scolfaro LMR, Beliaev D, Leite JR, Enderlein R, Alves JLA. Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'. Semiconductor Science and Technology. 1998 ; 13 981-988.[citado 2026 jan. 23 ]