Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds (2001)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1103/physrevb.63.165210
- Subjects: ESTRUTURA ELETRÔNICA; SEMICONDUTORES; SUPERFÍCIE FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physical Review B
- ISSN: 0163-1829
- Volume/Número/Paginação/Ano: v. 63, n. 16, p. 5210/1-5210/10, 2001
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
RAMOS, L. E. et al. Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds. Physical Review B, v. 63, n. 16, p. 5210/1-5210/10, 2001Tradução . . Disponível em: https://doi.org/10.1103/physrevb.63.165210. Acesso em: 23 jan. 2026. -
APA
Ramos, L. E., Teles, L. K., Scolfaro, L. M. R., Castineira, J. L. P., Rosa, A. L., & Leite, J. R. (2001). Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds. Physical Review B, 63( 16), 5210/1-5210/10. doi:10.1103/physrevb.63.165210 -
NLM
Ramos LE, Teles LK, Scolfaro LMR, Castineira JLP, Rosa AL, Leite JR. Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds [Internet]. Physical Review B. 2001 ; 63( 16): 5210/1-5210/10.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1103/physrevb.63.165210 -
Vancouver
Ramos LE, Teles LK, Scolfaro LMR, Castineira JLP, Rosa AL, Leite JR. Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds [Internet]. Physical Review B. 2001 ; 63( 16): 5210/1-5210/10.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1103/physrevb.63.165210 - Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic structure and stability of Be impurities in cubic boron nitride
- Light emission process in GaN/InGaN/GaN quantum wells
- Dynamical properties of III-nitrides
- Reduction or suppression of spinodal phase separation in cubic 'In IND.X' 'Ga IND.1-X''N' alloys: the role of the biaxial strain
- Ab initio theory of native defects in alloys: application to charged N vacancies in 'Al IND.X' 'Ga IND.1-X'N
- Spinodal decomposition in 'B IND.X' Ga IND.1-X'N alloys
- Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate
- Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys
Informações sobre o DOI: 10.1103/physrevb.63.165210 (Fonte: oaDOI API)
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