Dynamical properties of III-nitrides (2001)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; DISPOSITIVOS ÓPTICOS; DISPOSITIVOS ELETRÔNICOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
ALVES, H W Leite et al. Dynamical properties of III-nitrides. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 23 jan. 2026. -
APA
Alves, H. W. L., Alves, J. L. A., Scolfaro, L. M. R., & Leite, J. R. (2001). Dynamical properties of III-nitrides. In Resumos. São Paulo: SBF. -
NLM
Alves HWL, Alves JLA, Scolfaro LMR, Leite JR. Dynamical properties of III-nitrides. Resumos. 2001 ;[citado 2026 jan. 23 ] -
Vancouver
Alves HWL, Alves JLA, Scolfaro LMR, Leite JR. Dynamical properties of III-nitrides. Resumos. 2001 ;[citado 2026 jan. 23 ] - Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic structure and stability of Be impurities in cubic boron nitride
- Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
- Light emission process in GaN/InGaN/GaN quantum wells
- Reduction or suppression of spinodal phase separation in cubic 'In IND.X' 'Ga IND.1-X''N' alloys: the role of the biaxial strain
- Ab initio theory of native defects in alloys: application to charged N vacancies in 'Al IND.X' 'Ga IND.1-X'N
- Spinodal decomposition in 'B IND.X' Ga IND.1-X'N alloys
- Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate
- Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys
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