Electronic structure and stability of Be impurities in cubic boron nitride (1998)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physica Status Solidi B
- Volume/Número/Paginação/Ano: v. 210, n. 2, p. 401-405, 1998
-
ABNT
CASTINEIRA, J L P et al. Electronic structure and stability of Be impurities in cubic boron nitride. Physica Status Solidi B, v. 210, n. 2, p. 401-405, 1998Tradução . . Acesso em: 23 jan. 2026. -
APA
Castineira, J. L. P., Leite, J. R., Silva, J. L. F. da, Scolfaro, L. M. R., Alves, J. L. A., & Alves, H. W. L. (1998). Electronic structure and stability of Be impurities in cubic boron nitride. Physica Status Solidi B, 210( 2), 401-405. -
NLM
Castineira JLP, Leite JR, Silva JLF da, Scolfaro LMR, Alves JLA, Alves HWL. Electronic structure and stability of Be impurities in cubic boron nitride. Physica Status Solidi B. 1998 ; 210( 2): 401-405.[citado 2026 jan. 23 ] -
Vancouver
Castineira JLP, Leite JR, Silva JLF da, Scolfaro LMR, Alves JLA, Alves HWL. Electronic structure and stability of Be impurities in cubic boron nitride. Physica Status Solidi B. 1998 ; 210( 2): 401-405.[citado 2026 jan. 23 ] - Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
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