Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate (2005)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- DOI: 10.1016/j.jcrysgro.2005.07.049
- Subjects: MATÉRIA CONDENSADA; CRISTALOGRAFIA; FEIXES; CRESCIMENTO DE CRISTAIS; ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Crystal Growth
- ISSN: 0022-0248
- Volume/Número/Paginação/Ano: v. 284, n. 3-4, p. 379-387, 2005
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
LEITE, J. R. e SCOLFARO, Luisa Maria Ribeiro. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2005.07.049. Acesso em: 23 jan. 2026. -
APA
Leite, J. R., & Scolfaro, L. M. R. (2005). Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, 284( 3-4), 379-387. doi:10.1016/j.jcrysgro.2005.07.049 -
NLM
Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049 -
Vancouver
Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049 - Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
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- Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
- Light emission process in GaN/InGaN/GaN quantum wells
- Dynamical properties of III-nitrides
- Reduction or suppression of spinodal phase separation in cubic 'In IND.X' 'Ga IND.1-X''N' alloys: the role of the biaxial strain
- Ab initio theory of native defects in alloys: application to charged N vacancies in 'Al IND.X' 'Ga IND.1-X'N
- Spinodal decomposition in 'B IND.X' Ga IND.1-X'N alloys
- Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys
Informações sobre o DOI: 10.1016/j.jcrysgro.2005.07.049 (Fonte: oaDOI API)
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