Light emission process in GaN/InGaN/GaN quantum wells (2001)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; DIFRAÇÃO POR RAIOS X; LUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
LEITE, J. R. et al. Light emission process in GaN/InGaN/GaN quantum wells. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 23 jan. 2026. -
APA
Leite, J. R., Tabata, A., Teles, L. K., Scolfaro, L. M. R., Rodrigues, S. C. P., Silveira, E., et al. (2001). Light emission process in GaN/InGaN/GaN quantum wells. In Resumos. São Paulo: SBF. -
NLM
Leite JR, Tabata A, Teles LK, Scolfaro LMR, Rodrigues SCP, Silveira E, MENESES EA, Ribeiro E, As DJ, Lischka K. Light emission process in GaN/InGaN/GaN quantum wells. Resumos. 2001 ;[citado 2026 jan. 23 ] -
Vancouver
Leite JR, Tabata A, Teles LK, Scolfaro LMR, Rodrigues SCP, Silveira E, MENESES EA, Ribeiro E, As DJ, Lischka K. Light emission process in GaN/InGaN/GaN quantum wells. Resumos. 2001 ;[citado 2026 jan. 23 ] - Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
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