Ab initio theory of native defects in alloys: application to charged N vacancies in 'Al IND.X' 'Ga IND.1-X'N (2002)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: ESTRUTURA ATÔMICA (FÍSICA MODERNA); ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Physics: Condensed Matter
- ISSN: 0953-8984
- Volume/Número/Paginação/Ano: v. 14, n. 10, p. 2577-2589, 2002
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ABNT
RAMOS, L. E. et al. Ab initio theory of native defects in alloys: application to charged N vacancies in 'Al IND.X' 'Ga IND.1-X'N. Journal of Physics: Condensed Matter, v. 14, n. 10, p. 2577-2589, 2002Tradução . . Disponível em: http://www.iop.org/EJ3-Links/47/Ax,BAjMCspsfoLr,6pAEkg/c21009.pdf. Acesso em: 23 jan. 2026. -
APA
Ramos, L. E., Furthmüller, J., Bechstedt, F., Scolfaro, L. M. R., & Leite, J. R. (2002). Ab initio theory of native defects in alloys: application to charged N vacancies in 'Al IND.X' 'Ga IND.1-X'N. Journal of Physics: Condensed Matter, 14( 10), 2577-2589. Recuperado de http://www.iop.org/EJ3-Links/47/Ax,BAjMCspsfoLr,6pAEkg/c21009.pdf -
NLM
Ramos LE, Furthmüller J, Bechstedt F, Scolfaro LMR, Leite JR. Ab initio theory of native defects in alloys: application to charged N vacancies in 'Al IND.X' 'Ga IND.1-X'N [Internet]. Journal of Physics: Condensed Matter. 2002 ; 14( 10): 2577-2589.[citado 2026 jan. 23 ] Available from: http://www.iop.org/EJ3-Links/47/Ax,BAjMCspsfoLr,6pAEkg/c21009.pdf -
Vancouver
Ramos LE, Furthmüller J, Bechstedt F, Scolfaro LMR, Leite JR. Ab initio theory of native defects in alloys: application to charged N vacancies in 'Al IND.X' 'Ga IND.1-X'N [Internet]. Journal of Physics: Condensed Matter. 2002 ; 14( 10): 2577-2589.[citado 2026 jan. 23 ] Available from: http://www.iop.org/EJ3-Links/47/Ax,BAjMCspsfoLr,6pAEkg/c21009.pdf - Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
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- Electronic structure and stability of Be impurities in cubic boron nitride
- Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
- Light emission process in GaN/InGaN/GaN quantum wells
- Dynamical properties of III-nitrides
- Reduction or suppression of spinodal phase separation in cubic 'In IND.X' 'Ga IND.1-X''N' alloys: the role of the biaxial strain
- Spinodal decomposition in 'B IND.X' Ga IND.1-X'N alloys
- Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate
- Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys
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