Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'

Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS' (1993)

Authors:
- Henriques, André Bohomoletz
- Gonçalves, L. C. D.
Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
Unidade: IF
Assunto: FÍSICA DE PARTÍCULAS
Language: Inglês
Imprenta:
- Publisher place: Londres
- Date published: 1993
Source:
- Título do periódico: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v.8 , n.4 , p.585-9, abr. 1993

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ABNT

HENRIQUES, André Bohomoletz; GONÇALVES, L. C. D. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology, Londres, v. 8 , n. 4 , p. 585-9, 1993.
APA

Henriques, A. B., & Gonçalves, L. C. D. (1993). Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology, 8 ( 4 ), 585-9.
NLM

Henriques AB, Gonçalves LCD. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology. 1993 ;8 ( 4 ): 585-9.
Vancouver

Henriques AB, Gonçalves LCD. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology. 1993 ;8 ( 4 ): 585-9.