Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS' (1993)
- Authors:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Assunto: FÍSICA DE PARTÍCULAS
- Language: Inglês
- Imprenta:
- Source:
- Título: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v.8 , n.4 , p.585-9, abr. 1993
-
ABNT
HENRIQUES, André Bohomoletz e GONÇALVES, L. C. D. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology, v. 8 , n. 4 , p. 585-9, 1993Tradução . . Acesso em: 10 fev. 2026. -
APA
Henriques, A. B., & Gonçalves, L. C. D. (1993). Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology, 8 ( 4 ), 585-9. -
NLM
Henriques AB, Gonçalves LCD. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology. 1993 ;8 ( 4 ): 585-9.[citado 2026 fev. 10 ] -
Vancouver
Henriques AB, Gonçalves LCD. Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'. Semiconductor Science and Technology. 1993 ;8 ( 4 ): 585-9.[citado 2026 fev. 10 ] - Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
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