Optical investigation of magnetic phases in epitaxial 'EU''SE' (2010)
- Authors:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Assunto: FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
GALGANO, Giovanni Decot e HENRIQUES, André Bohomoletz. Optical investigation of magnetic phases in epitaxial 'EU''SE'. 2010, Anais.. São Paulo: SBF, 2010. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R1089-1.pdf. Acesso em: 30 dez. 2025. -
APA
Galgano, G. D., & Henriques, A. B. (2010). Optical investigation of magnetic phases in epitaxial 'EU''SE'. In . São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R1089-1.pdf -
NLM
Galgano GD, Henriques AB. Optical investigation of magnetic phases in epitaxial 'EU''SE' [Internet]. 2010 ;[citado 2025 dez. 30 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R1089-1.pdf -
Vancouver
Galgano GD, Henriques AB. Optical investigation of magnetic phases in epitaxial 'EU''SE' [Internet]. 2010 ;[citado 2025 dez. 30 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R1089-1.pdf - Density and graviton pertubations in the cosmic microwave background
- Diamagnetic effects in structures containing a single, a few or an infinite number of coupled delta layers
- Characterization of delta-doped superlattices by shubnikov-de haas measurements
- Band-edge polarized optical absorption in europium chalcogenides
- Obervation of densely populated Tamm states in modulation-doped superlattices
- Magneto-photoluminescence of Tamm states in 'InP/In.IND.0.53' 'Ga IND.0.47' As superlattices
- Strong luminescence from Tamm states in modulation-doped superlattices
- Magneto-optical studies of 'Pb IND.1-X' 'Eu IND.X' Te
- Níveis de Landau e fotoluminescência de super-redes 'In IND.0,53' 'Ga IND.0,47'As/InP tipo-n
- Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy
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