Quantum and transport mobilities in 'DELTA'-doped semiconductors (1996)
- Autor:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physical Review B
- Volume/Número/Paginação/Ano: v.53, n.24, p.16365, 1996
-
ABNT
HENRIQUES, André Bohomoletz. Quantum and transport mobilities in 'DELTA'-doped semiconductors. Physical Review B, v. 53, n. 24, p. 16365, 1996Tradução . . Acesso em: 28 dez. 2025. -
APA
Henriques, A. B. (1996). Quantum and transport mobilities in 'DELTA'-doped semiconductors. Physical Review B, 53( 24), 16365. -
NLM
Henriques AB. Quantum and transport mobilities in 'DELTA'-doped semiconductors. Physical Review B. 1996 ;53( 24): 16365.[citado 2025 dez. 28 ] -
Vancouver
Henriques AB. Quantum and transport mobilities in 'DELTA'-doped semiconductors. Physical Review B. 1996 ;53( 24): 16365.[citado 2025 dez. 28 ] - Density and graviton pertubations in the cosmic microwave background
- Diamagnetic effects in structures containing a single, a few or an infinite number of coupled delta layers
- Characterization of delta-doped superlattices by shubnikov-de haas measurements
- Band-edge polarized optical absorption in europium chalcogenides
- Obervation of densely populated Tamm states in modulation-doped superlattices
- Magneto-photoluminescence of Tamm states in 'InP/In.IND.0.53' 'Ga IND.0.47' As superlattices
- Strong luminescence from Tamm states in modulation-doped superlattices
- Magneto-optical studies of 'Pb IND.1-X' 'Eu IND.X' Te
- Níveis de Landau e fotoluminescência de super-redes 'In IND.0,53' 'Ga IND.0,47'As/InP tipo-n
- Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
