Quantum and transport mobilities in 'DELTA'-doped semiconductors (1996)
- Autor:
- Autor USP: HENRIQUES, ANDRE BOHOMOLETZ - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Physical Review B
- Volume/Número/Paginação/Ano: v.53, n.24, p.16365, 1996
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ABNT
HENRIQUES, André Bohomoletz. Quantum and transport mobilities in 'DELTA'-doped semiconductors. Physical Review B, v. 53, n. 24, p. 16365, 1996Tradução . . Acesso em: 29 mar. 2024. -
APA
Henriques, A. B. (1996). Quantum and transport mobilities in 'DELTA'-doped semiconductors. Physical Review B, 53( 24), 16365. -
NLM
Henriques AB. Quantum and transport mobilities in 'DELTA'-doped semiconductors. Physical Review B. 1996 ;53( 24): 16365.[citado 2024 mar. 29 ] -
Vancouver
Henriques AB. Quantum and transport mobilities in 'DELTA'-doped semiconductors. Physical Review B. 1996 ;53( 24): 16365.[citado 2024 mar. 29 ] - Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
- Magneto-optical studies of screened excitons in 'GA''AS' / 'AL IND.X' 'GA IND.1-X''AS' modulation doped quantum wells
- Analise espectral de processos magneto-oscilatorios
- Magnetic quantum effects in degenerate superlattices
- High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
- Optical investigation of magnetic phases in epitaxial 'EU''SE'
- Pseudomorphic InxGal -xAs/InO.52Al0.48As modulation doped heterostructures grown by LP-MOVPE
- Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy
- InP/InGaAs doped quantum barrier systems
- Band-edge polarized optical absorption in europium telluride
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