Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape (2009)
- Authors:
- USP affiliated authors: MARTINO, JOAO ANTONIO - EP ; PAVANELLO, MARCELO ANTONIO - EP
- Unidade: EP
- DOI: 10.1088/0268-1242/24/11/115017
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher place: Bristol; Woodbury
- Date published: 2009
- Source:
- Título do periódico: Semiconductor Science and Technology
- ISSN: 0268-1242
- Volume/Número/Paginação/Ano: v. 24, n.11, 2009
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
BÜHLER, Rudolf Theoderich et al. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape. Semiconductor Science and Technology, v. 24, n. 11, 2009Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/24/11/115017. Acesso em: 23 abr. 2024. -
APA
Bühler, R. T., Giacomini, R., Pavanello, M. A., & Martino, J. A. (2009). Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape. Semiconductor Science and Technology, 24( 11). doi:10.1088/0268-1242/24/11/115017 -
NLM
Bühler RT, Giacomini R, Pavanello MA, Martino JA. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape [Internet]. Semiconductor Science and Technology. 2009 ; 24( 11):[citado 2024 abr. 23 ] Available from: https://doi.org/10.1088/0268-1242/24/11/115017 -
Vancouver
Bühler RT, Giacomini R, Pavanello MA, Martino JA. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape [Internet]. Semiconductor Science and Technology. 2009 ; 24( 11):[citado 2024 abr. 23 ] Available from: https://doi.org/10.1088/0268-1242/24/11/115017 - Analysis of deep submicrometer bulk and fully depleted soi nmosfet analog operation at cryogenic temperatures
- Physical characterization and reliability aspects of MuGFETs
- A study on the self-heating effect in deep-submicrometer partially depleted SOI MOSFETs at low temperatures
- Halo effect on 0.13 'mu'm floating-body partially depleted SOI n-Mosfets in low temperature operation
- Analog circuit design using graded-channel silicon-on-insulator nMOSFETs
- Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs
- Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates
- Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
- Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures
- Comparison between conventional and graded-channel SOI nMOSFETs in low temperature operation
Informações sobre o DOI: 10.1088/0268-1242/24/11/115017 (Fonte: oaDOI API)
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