Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape (2009)
- Authors:
- USP affiliated authors: MARTINO, JOAO ANTONIO - EP ; PAVANELLO, MARCELO ANTONIO - EP
- Unidade: EP
- DOI: 10.1088/0268-1242/24/11/115017
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher place: Bristol; Woodbury
- Date published: 2009
- Source:
- Título: Semiconductor Science and Technology
- ISSN: 0268-1242
- Volume/Número/Paginação/Ano: v. 24, n.11, 2009
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
BÜHLER, Rudolf Theoderich et al. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape. Semiconductor Science and Technology, v. 24, n. 11, 2009Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/24/11/115017. Acesso em: 23 jan. 2026. -
APA
Bühler, R. T., Giacomini, R., Pavanello, M. A., & Martino, J. A. (2009). Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape. Semiconductor Science and Technology, 24( 11). doi:10.1088/0268-1242/24/11/115017 -
NLM
Bühler RT, Giacomini R, Pavanello MA, Martino JA. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape [Internet]. Semiconductor Science and Technology. 2009 ; 24( 11):[citado 2026 jan. 23 ] Available from: https://doi.org/10.1088/0268-1242/24/11/115017 -
Vancouver
Bühler RT, Giacomini R, Pavanello MA, Martino JA. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape [Internet]. Semiconductor Science and Technology. 2009 ; 24( 11):[citado 2026 jan. 23 ] Available from: https://doi.org/10.1088/0268-1242/24/11/115017 - Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature
- Analog performance of graded-channel SOI NMOSFETS at low temperatures
- A simple analytical model of graded-channel SOI nMOSFET transconductance
- Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments
- Analysis of harmonic distortion in graded-channel SOI MOSFETs at high temperatures
- Design of operational transconductance amplifiers with improved gain by using graded-channel SOI nMOSFETs
- Comparison between drain induced barrier lowering in partially and fully depleted 0.13'mu'm SOI nMOSFETs in low temperature operation
- Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures
- Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs
- Implementation of high performance operational transconductance amplifiers using graded-channel SOI nMOSFETs
Informações sobre o DOI: 10.1088/0268-1242/24/11/115017 (Fonte: oaDOI API)
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