Analog performance of graded-channel SOI NMOSFETS at low temperatures (2002)
- Authors:
- USP affiliated authors: MARTINO, JOAO ANTONIO - EP
- Unidades: EP
- Subjects: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Place of publication: Pennington
- Date published: 2002
- ISBN: 1-56677-328-8
- Source:
- Título do periódico: Microelectronics Technology and Devices SBMICRO 2002
-
ABNT
PAVANELLO, Marcelo Antonio; MARTINO, João Antonio; FLANDRE, Denis. Analog performance of graded-channel SOI NMOSFETS at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002. -
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2002). Analog performance of graded-channel SOI NMOSFETS at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society. -
NLM
Pavanello MA, Martino JA, Flandre D. Analog performance of graded-channel SOI NMOSFETS at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. -
Vancouver
Pavanello MA, Martino JA, Flandre D. Analog performance of graded-channel SOI NMOSFETS at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. - Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
- Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes
- Understanding and optimizing the floating body retention in FDSOI UTBOX
- Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities
- Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
- Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence
- Sistema endereçável de detecção e controle. (também em CD-Rom)
- Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
- A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor
- A novel leakage drain current model for SOI MOSFETs devices at high temperature
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