Analog performance of graded-channel SOI NMOSFETS at low temperatures (2002)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; PAVANELLO, MARCELO ANTONIO - EP
- School: EP
- Subject: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Place of publication: Pennington
- Date published: 2002
- Source:
- Título do periódico: Microelectronics Technology and Devices SBMICRO 2002
- Conference title: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
PAVANELLO, Marcelo Antonio; MARTINO, João Antonio; FLANDRE, Denis. Analog performance of graded-channel SOI NMOSFETS at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002[S.l: s.n.], 2002. -
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2002). Analog performance of graded-channel SOI NMOSFETS at low temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society. -
NLM
Pavanello MA, Martino JA, Flandre D. Analog performance of graded-channel SOI NMOSFETS at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. -
Vancouver
Pavanello MA, Martino JA, Flandre D. Analog performance of graded-channel SOI NMOSFETS at low temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. - Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K
- Determination of the silicon film thickness and back oxide charge density on graded-channel SOI nMOSFETs
- A physically-based continuous model for graded-channel SOI MOSFET
- Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
- Impact of the graded-channel architecture on double gate transistors for high-performance analog applications
- Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range
- Behavior of graded channel SOI gate-all-around NMOSFET devices at high temperatures
- Comparison between conventional and graded-channel SOI nMOSFETs in low temperature operation
- Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs
- Analysis of deep submicrometer bulk and fully depleted soi nmosfet analog operation at cryogenic temperatures
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