New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures (1993)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Source:
- Título: Semiconductor Science and Technology
- Volume/Número/Paginação/Ano: v.8 , p.1479, 1993
-
ABNT
BELIAEV, D e SCOLFARO, L M R e LEITE, J. R. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology, v. 8 , p. 1479, 1993Tradução . . Acesso em: 08 out. 2024. -
APA
Beliaev, D., Scolfaro, L. M. R., & Leite, J. R. (1993). New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology, 8 , 1479. -
NLM
Beliaev D, Scolfaro LMR, Leite JR. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology. 1993 ;8 1479.[citado 2024 out. 08 ] -
Vancouver
Beliaev D, Scolfaro LMR, Leite JR. New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures. Semiconductor Science and Technology. 1993 ;8 1479.[citado 2024 out. 08 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Energy levels due to n-type'GAMA'-doping in silicon
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
- Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
- Phase separation suppression in InGaN epitaxial layers due to biaxial strain
- Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
