Electronic properties of nitride-alloys through first principles calculations (1999)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
SCOLFARO, Luisa Maria Ribeiro et al. Electronic properties of nitride-alloys through first principles calculations. 1999, Anais.. São Paulo: SBF, 1999. . Acesso em: 15 mar. 2026. -
APA
Scolfaro, L. M. R., Marques, M., Teles, L. K., & Leite, J. R. (1999). Electronic properties of nitride-alloys through first principles calculations. In Resumos. São Paulo: SBF. -
NLM
Scolfaro LMR, Marques M, Teles LK, Leite JR. Electronic properties of nitride-alloys through first principles calculations. Resumos. 1999 ;[citado 2026 mar. 15 ] -
Vancouver
Scolfaro LMR, Marques M, Teles LK, Leite JR. Electronic properties of nitride-alloys through first principles calculations. Resumos. 1999 ;[citado 2026 mar. 15 ] - Efeito de carga imagem em Poços Quânticos Si/SrTi/O IND. 3 e Si/Hf'O IND. 2'
- Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon
- First principles materials study for spintronics: MnAs and MnN
- Ab initio studies of indium separated phases in AlGaInN quaternary alloys
- Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells
- Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon
- Minibands of p-type 'delta'-doping superlattices in GaAs
- Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction
- Density Functional theory for Holes in Semiconductors
- p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures
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