Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon (1999)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Superlattices and Microstructures
- Volume/Número/Paginação/Ano: v. 25, n. 1/2, p. 67-71, 1999
-
ABNT
ROSA, A. L. et al. Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon. Superlattices and Microstructures, v. 25, n. 1/2, p. 67-71, 1999Tradução . . Acesso em: 11 mar. 2026. -
APA
Rosa, A. L., Scolfaro, L. M. R., Leite, J. R., & Sipahi, G. M. (1999). Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon. Superlattices and Microstructures, 25( 1/2), 67-71. -
NLM
Rosa AL, Scolfaro LMR, Leite JR, Sipahi GM. Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon. Superlattices and Microstructures. 1999 ; 25( 1/2): 67-71.[citado 2026 mar. 11 ] -
Vancouver
Rosa AL, Scolfaro LMR, Leite JR, Sipahi GM. Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon. Superlattices and Microstructures. 1999 ; 25( 1/2): 67-71.[citado 2026 mar. 11 ] - Efeito de carga imagem em Poços Quânticos Si/SrTi/O IND. 3 e Si/Hf'O IND. 2'
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