First principles materials study for spintronics: MnAs and MnN (2003)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Book of Abstract
- Volume/Número/Paginação/Ano: Fortaleza : DF/UFC, 2003
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
PAIVA, R de et al. First principles materials study for spintronics: MnAs and MnN. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 11 mar. 2026. -
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2003). First principles materials study for spintronics: MnAs and MnN. In Book of Abstract. Fortaleza: DF/UFC. -
NLM
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First principles materials study for spintronics: MnAs and MnN. Book of Abstract. 2003 ;[citado 2026 mar. 11 ] -
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First principles materials study for spintronics: MnAs and MnN. Book of Abstract. 2003 ;[citado 2026 mar. 11 ] - Efeito de carga imagem em Poços Quânticos Si/SrTi/O IND. 3 e Si/Hf'O IND. 2'
- Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon
- Ab initio studies of indium separated phases in AlGaInN quaternary alloys
- Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells
- Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon
- Minibands of p-type 'delta'-doping superlattices in GaAs
- Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction
- Density Functional theory for Holes in Semiconductors
- p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures
- Method for calculating photo - and electroreflectance spectra from semiconductor heterostructures
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