First principles materials study for spintronics: MnAs and MnN (2003)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Book of Abstract
- Volume/Número/Paginação/Ano: Fortaleza : DF/UFC, 2003
- Conference titles: Brazilian Workshop on Semiconductor Physics
-
ABNT
PAIVA, R de et al. First principles materials study for spintronics: MnAs and MnN. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 08 nov. 2024. -
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Leite, J. R., & Scolfaro, L. M. R. (2003). First principles materials study for spintronics: MnAs and MnN. In Book of Abstract. Fortaleza: DF/UFC. -
NLM
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First principles materials study for spintronics: MnAs and MnN. Book of Abstract. 2003 ;[citado 2024 nov. 08 ] -
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Leite JR, Scolfaro LMR. First principles materials study for spintronics: MnAs and MnN. Book of Abstract. 2003 ;[citado 2024 nov. 08 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Energy levels due to n-type'GAMA'-doping in silicon
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
- Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
- Phase separation suppression in InGaN epitaxial layers due to biaxial strain
- Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations
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