Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction (1994)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physical Review B
- Volume/Número/Paginação/Ano: v.50, n.24, p.18312-8, 1994
-
ABNT
ENDERLEIN, R e SCOLFARO, L M R e LEITE, J. R. Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction. Physical Review B, v. 50, n. 24, p. 18312-8, 1994Tradução . . Acesso em: 18 maio 2025. -
APA
Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1994). Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction. Physical Review B, 50( 24), 18312-8. -
NLM
Enderlein R, Scolfaro LMR, Leite JR. Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction. Physical Review B. 1994 ;50( 24): 18312-8.[citado 2025 maio 18 ] -
Vancouver
Enderlein R, Scolfaro LMR, Leite JR. Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction. Physical Review B. 1994 ;50( 24): 18312-8.[citado 2025 maio 18 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Energy levels due to n-type'GAMA'-doping in silicon
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
- Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
- Phase separation suppression in InGaN epitaxial layers due to biaxial strain
- Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations
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