Method for calculating photo - and electroreflectance spectra from semiconductor heterostructures (1995)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- DOI: 10.1103/physrevb.52.2814
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physical Review B
- Volume/Número/Paginação/Ano: v.52, p.2814-22, 1995
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ENDERLEIN, R et al. Method for calculating photo - and electroreflectance spectra from semiconductor heterostructures. Physical Review B, v. 52, p. 2814-22, 1995Tradução . . Disponível em: https://doi.org/10.1103/physrevb.52.2814. Acesso em: 08 out. 2024. -
APA
Enderlein, R., Beliaev, D., Soares, J. A. N. T., Scolfaro, L. M. R., & Leite, J. R. (1995). Method for calculating photo - and electroreflectance spectra from semiconductor heterostructures. Physical Review B, 52, 2814-22. doi:10.1103/physrevb.52.2814 -
NLM
Enderlein R, Beliaev D, Soares JANT, Scolfaro LMR, Leite JR. Method for calculating photo - and electroreflectance spectra from semiconductor heterostructures [Internet]. Physical Review B. 1995 ;52 2814-22.[citado 2024 out. 08 ] Available from: https://doi.org/10.1103/physrevb.52.2814 -
Vancouver
Enderlein R, Beliaev D, Soares JANT, Scolfaro LMR, Leite JR. Method for calculating photo - and electroreflectance spectra from semiconductor heterostructures [Internet]. Physical Review B. 1995 ;52 2814-22.[citado 2024 out. 08 ] Available from: https://doi.org/10.1103/physrevb.52.2814 - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Energy levels due to n-type'GAMA'-doping in silicon
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
- Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
- Phase separation suppression in InGaN epitaxial layers due to biaxial strain
- Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations
Informações sobre o DOI: 10.1103/physrevb.52.2814 (Fonte: oaDOI API)
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