Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells (1992)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Superlattices and Microstructures
- Volume/Número/Paginação/Ano: v.12, n.2 , p.257-60, dez. 1992
-
ABNT
MENDONCA, C A C et al. Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells. Superlattices and Microstructures, v. 12, n. 2 , p. 257-60, 1992Tradução . . Acesso em: 11 fev. 2026. -
APA
Mendonca, C. A. C., Scolfaro, L. M. R., Oliveira, J. B. B., Plentz, F., Micovic, M., Leite, J. R., & Meneses, E. A. (1992). Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells. Superlattices and Microstructures, 12( 2 ), 257-60. -
NLM
Mendonca CAC, Scolfaro LMR, Oliveira JBB, Plentz F, Micovic M, Leite JR, Meneses EA. Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells. Superlattices and Microstructures. 1992 ;12( 2 ): 257-60.[citado 2026 fev. 11 ] -
Vancouver
Mendonca CAC, Scolfaro LMR, Oliveira JBB, Plentz F, Micovic M, Leite JR, Meneses EA. Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells. Superlattices and Microstructures. 1992 ;12( 2 ): 257-60.[citado 2026 fev. 11 ] - Efeito de carga imagem em Poços Quânticos Si/SrTi/O IND. 3 e Si/Hf'O IND. 2'
- Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon
- First principles materials study for spintronics: MnAs and MnN
- Ab initio studies of indium separated phases in AlGaInN quaternary alloys
- Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon
- Minibands of p-type 'delta'-doping superlattices in GaAs
- Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction
- Density Functional theory for Holes in Semiconductors
- p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures
- Method for calculating photo - and electroreflectance spectra from semiconductor heterostructures
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