Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N (2001)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physical Review B
- ISSN: 0163-1829
- Volume/Número/Paginação/Ano: v. 63, n. 8, p. 5204/1-5204/5, 2001
-
ABNT
TELES, L. K. et al. Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N. Physical Review B, v. 63, n. 8, p. 5204/1-5204/5, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000063000008085204000001&idtype=cvips. Acesso em: 15 mar. 2026. -
APA
Teles, L. K., Furthmuller, J., Scolfaro, L. M. R., Leite, J. R., & Bechstedt, F. (2001). Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N. Physical Review B, 63( 8), 5204/1-5204/5. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000063000008085204000001&idtype=cvips -
NLM
Teles LK, Furthmuller J, Scolfaro LMR, Leite JR, Bechstedt F. Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N [Internet]. Physical Review B. 2001 ; 63( 8): 5204/1-5204/5.[citado 2026 mar. 15 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000063000008085204000001&idtype=cvips -
Vancouver
Teles LK, Furthmuller J, Scolfaro LMR, Leite JR, Bechstedt F. Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N [Internet]. Physical Review B. 2001 ; 63( 8): 5204/1-5204/5.[citado 2026 mar. 15 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000063000008085204000001&idtype=cvips - Efeito de carga imagem em Poços Quânticos Si/SrTi/O IND. 3 e Si/Hf'O IND. 2'
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- First principles materials study for spintronics: MnAs and MnN
- Ab initio studies of indium separated phases in AlGaInN quaternary alloys
- Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells
- Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon
- Minibands of p-type 'delta'-doping superlattices in GaAs
- Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction
- Density Functional theory for Holes in Semiconductors
- p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures
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