Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations (2000)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
TELES, L. K. e SCOLFARO, Luisa Maria Ribeiro e LEITE, J. R. Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations. 2000, Anais.. São Paulo: SBF, 2000. . Acesso em: 02 jan. 2026. -
APA
Teles, L. K., Scolfaro, L. M. R., & Leite, J. R. (2000). Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations. In Resumos. São Paulo: SBF. -
NLM
Teles LK, Scolfaro LMR, Leite JR. Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations. Resumos. 2000 ;[citado 2026 jan. 02 ] -
Vancouver
Teles LK, Scolfaro LMR, Leite JR. Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations. Resumos. 2000 ;[citado 2026 jan. 02 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Energy levels due to n-type'GAMA'-doping in silicon
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
- Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
- Phase separation suppression in InGaN epitaxial layers due to biaxial strain
- Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
